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IS25LE01G-RILA3-TY Folha de dados(PDF) 175 Page - Integrated Silicon Solution, Inc

Nome de Peças IS25LE01G-RILA3-TY
Descrição Electrónicos  SERIAL FLASH MEMORY 133/104MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  186 Pages
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Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE01G-RILA3-TY Folha de dados(HTML) 175 Page - Integrated Silicon Solution, Inc

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IS25LE01G
IS25WE01G
Integrated Silicon Solution, Inc.- www.issi.com
175
Rev. A6
01/14/2025
9. ELECTRICAL CHARACTERISTICS
9.1 ABSOLUTE MAXIMUM RATINGS (1)
Storage Temperature
-65°C to +150°C
Input Voltage with Respect to Ground on All Pins
-0.5V to VCC + 0.5V
All Output Voltage with Respect to Ground
-0.5V to VCC + 0.5V
VCC
IS25LE
-0.5V to +6.0V
IS25WE
-0.5V to +2.5V
Note:
1.
Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
9.2 OPERATING RANGE
Operating Temperature
Extended Grade E
-40°C to 105°C
Automotive Grade A3
-40°C to 125°C
VCC Power Supply
IS25LE
2.7V (VMIN)
– 3.6V (VMAX); 3.0V (Typ)
IS25WE
1.70V (VMIN)
–1.95V (VMAX); 1.8V (Typ)



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