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IS25LE128E-RMLA3:P-TY Folha de dados(PDF) 154 Page - Integrated Silicon Solution, Inc

Nome de Peças IS25LE128E-RMLA3:P-TY
Descrição Electrónicos  SERIAL FLASH MEMORY 133/166MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  197 Pages
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Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
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IS25LE128E-RMLA3:P-TY Folha de dados(HTML) 154 Page - Integrated Silicon Solution, Inc

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IS25LE256E/128E
IS25WE256E/128E
Integrated Silicon Solution, Inc.- www.issi.com
154
Rev.A9
03/07/2023
8.50 EXIT 4-BYTE ADDRESS MODE OPERATION (EX4B, 29h)
In order to be backward compatible, the Exit 4-byte Address Mode instruction allows 24bit address (A23-A0) to be
used to access the memory array up to 128Mb. The Bank Address Register must be used to access the memory
array beyond 128Mb. To execute EX4B operation, the host drives CE# low, sends the instruction code and then
drives CE# high.
A Write Enable (WREN, 06h) command is not required prior to EX4B (29h) command.
Note: The EX4B instruc
tion will reset the Bit 7 (EXTADD) of the volatile Bank Address Register to “0” ”, but will not
change the non-volatile Bank Address Register.
Figure 8.113 Exit 4-byte Address Mode Sequence In SPI Mode
Instruction = 29h
CE#
SCK
SI
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SO
High Impedance
Figure 8.114 Exit 4-byte Address Mode Sequence In QPI Mode
29h
CE#
SCK
IO[3:0]
0
1
Mode 3
Mode 0



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