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STM32H523CEU6 Folha de dados(PDF) 123 Page - STMicroelectronics

Nome de Peças STM32H523CEU6
Descrição Electrónicos  Arm Cortex -M33 32-bit MCUTrustZone FPU, 375 DMIPS Arm Cortex -M33 32-bit MCUTrustZone FPU, 375 DMIPS
PDF  228 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H523CEU6 Folha de dados(HTML) 123 Page - STMicroelectronics

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DS14540 Rev 1
123/228
STM32H523xx
Electrical characteristics
197
5.3.10
Memory characteristics
Flash memory
The characteristics are given at TJ = -40 to 130 °C unless otherwise specified.
The devices are shipped to customers with the flash memory erased.
Jitter
Cycle-to-cycle jitter
fVCO_OUT = 150 MHz
-
-
60
-
±ps
fVCO_OUT = 200 MHz
-
-
40
-
fVCO_OUT = 400 MHz
-
-
18
-
fVCO_OUT = 420 MHz
-
-
15
-
Period jitter
fVCO_OUT = 150 MHz
fPLL_OUT =
50 MHz
-75
-
fVCO_OUT = 400 MHz
-
25
-
Long term jitter
Normal mode fVCO_OUT = 400 MHz
-
±0.2
-
%
IDD(PLL)
PLL power consumption on
VDD
fVCO_OUT = 420 MHz
VDD
-
275
360
μA
VCORE
-450
-
fVCO_OUT = 150 MHz
VDD
-
160
240
VCORE
-165
-
1. Specified by design - Not tested in production, unless otherwise specified.
2. This value must be limited to the maximum frequency due to the product limitation.
3. Evaluated by characterization - Not tested in production.
Table 47. PLL characteristics (medium VCO frequency range) (continued)
Symbol
Parameter
Conditions
Min(1) Typ(1) Max(1) Unit
Table 48. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Specified by design - Not tested in production
Unit
IDD
Supply current
Word program(2)
2. Data is evaluated with a write of 50% of the programmed bits equal to 0.
-2.5
3.6
mA
Sector erase
-
1.8
4
Mass erase
-
2.0
4
Table 49. Flash memory programming(1)
1. Data are valid for program memory and high-cycling data memory.
Symbol
Parameter
Conditions
Min(2)
Typ
Max(2)
Unit
tprog
Word program time
128 bits (user area)
-
32
100
µs
16 bits (OTP area)
-
32
100
tERASE
Sector erase time (8 Kbytes)
-
-
2
10
ms
tME
Mass erase time
-
0.52
2.6
s
Vprog
Programming voltage
1.71
-
3.6
V



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