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STM32F412RGJ3P Folha de dados(PDF) 148 Page - STMicroelectronics

Nome de Peças STM32F412RGJ3P
Descrição Electrónicos  Arm®-Cortex®-M4 32b MCUFPU, 125 DMIPS, 1MB Flash, 256KB RAM, USB OTG FS, 17 TIMs, 1 ADC, 17 comm. interfaces
PDF  201 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STM32F412RGJ3P Folha de dados(HTML) 148 Page - STMicroelectronics

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Electrical characteristics
STM32F412xE/G
148/201
DocID028087 Rev 7
6.3.22
VBAT monitoring characteristics
6.3.23
Embedded reference voltage
The parameters given in Table 81 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.
Table 80. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
4
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 81. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
- 40 °C < TA < +125 °C 1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3V ± 10mV
-
3
5
mV
TCoeff(2)
Temperature coefficient
-
-
30
50
ppm/°C
tSTART(2)
Startup time
-
-
6
10
µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production
Table 82. Internal reference voltage calibration values
Symbol
Parameter
Memory address
VREFIN_CAL
Raw data acquired at temperature of
30 °C VDDA = 3.3 V
0x1FFF 7A2A - 0x1FFF 7A2B



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