STM32F412RGJ3P datasheet(143/201 Pages) STMICROELECTRONICS

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STM32F412xE/G

Electrical characteristics

166

Table 74. ADC accuracy at fADC = 30 MHz(1)

1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.

Symbol

Parameter

Test conditions

Typ

Max(2)

2. Guaranteed by characterization, not tested in production.

Unit

Total unadjusted error

fADC = 30 MHz,

RAIN < 10 kΩ,

VDDA = 2.4 to 3.6 V,

VREF = 1.7 to 3.6 V,

VDDA −VREF < 1.2 V

±2

±5

LSB

Offset error

±1.5

±2.5

Gain error

±1.5

±4

Differential linearity error

±1

±2

Integral linearity error

±1.5

±3

Table 75. ADC accuracy at fADC = 36 MHz(1)

1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.

Symbol

Parameter

Test conditions

Typ

Max(2)

2. Guaranteed by characterization, not tested in production.

Unit

Total unadjusted error

fADC =36 MHz,

VDDA = 2.4 to 3.6 V,

VREF = 1.7 to 3.6 V

VDDA −VREF < 1.2 V

±4

±7

LSB

Offset error

±2

±3

Gain error

±3

±6

Differential linearity error

±2

±3

Integral linearity error

±3

±6

Table 76. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

ENOB

Effective number of bits

fADC =18 MHz

VDDA = VREF+= 1.7 V

Input Frequency = 20 kHz

Temperature = 25 °C

10.3

10.4

bits

SINAD

Signal-to-noise and distortion ratio

64.2

SNR

Signal-to-noise ratio

THD

Total harmonic distortion

-72

-67

1. Guaranteed by characterization, not tested in production.

Table 77. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

ENOB

Effective number of bits

fADC = 36 MHz

VDDA = VREF+ = 3.3 V

Input Frequency = 20 kHz

Temperature = 25 °C

10.6

10.8

bits

SINAD

Signal-to noise and distortion ratio

SNR

Signal-to noise ratio

THD

Total harmonic distortion

-72

-70

1. Guaranteed by characterization, not tested in production.

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