PIC16F616-ESLASHML datasheet(141/180 Pages) MICROCHIP

141 / 180 page

Preliminary

DS41288C-page 139

PIC16F610/616/16HV610/616

15.0

ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings(†)

Ambient temperature under bias..........................................................................................................-40° to +125°C

Storage temperature ........................................................................................................................ -65°C to +150°C

Voltage on VDD with respect to VSS ................................................................................................... -0.3V to +6.5V

Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V

Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)

Total power dissipation(1) ............................................................................................................................... 800 mW

Maximum current out of VSS pin ...................................................................................................................... 95 mA

Maximum current into VDD pin ......................................................................................................................... 95 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

...............................................................................................................± 20 mA

Output clamp current, IOK (Vo < 0 or Vo >VDD)

.........................................................................................................± 20 mA

Maximum output current sunk by any I/O pin.................................................................................................... 25 mA

Maximum output current sourced by any I/O pin .............................................................................................. 25 mA

Maximum current sunk by PORTA and PORTC (combined) ........................................................................... 90 mA

Maximum current sourced PORTA and PORTC (combined) ........................................................................... 90 mA

Note 1:

Power dissipation is calculated as follows: PDIS = VDD x {IDD –

∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOl x IOL).

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for

extended periods may affect device reliability.

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