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STM32U535NET6QTR Folha de dados(PDF) 171 Page - STMicroelectronics

Nome de Peças STM32U535NET6QTR
Descrição Electrónicos  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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Table 70. Current consumption in VBAT mode
Symbol
Parameter
Conditions
Typ
Max(1)
Unit
-VBAT (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
IDD(VBAT)
Supply current in
VBAT mode (backup
registers retained),
RTC disabled
-
1.8
0.05
0.22
1.10
2.95
8.00
0.12
0.55
2.80
7.40
20.00
µA
2.4
0.06
0.24
1.15
3.05
8.20
0.15
0.60
2.90
7.70
21.00
3.0
0.08
0.29
1.30
3.30
8.65
0.20
0.73
3.30
8.30
22.00
3.3
0.15
0.40
1.50
3.60
9.15
0.37
1.00
3.80
9.00
23.00
3.6
0.31
0.66
1.90
4.25
10.00
0.77
1.70
4.80
11.00 25.00
IDD(VBATwith
RTC)
Supply current in
VBAT mode (backup
registers retained),
RTC enabled
RTC(2) clocked by LSE
bypassed at 32768 Hz
1.8
0.28
0.47
1.50
3.40
8.60
0.37
0.83
3.20
7.90
21.00
2.4
0.30
0.50
1.65
3.60
8.90
0.41
0.89
3.50
8.30
22.00
3.0
0.33
0.56
1.85
3.95
9.40
0.47
1.10
3.90
9.00
23.00
3.3
0.40
0.68
2.10
4.30
10.00
0.65
1.40
4.50
9.80
24.00
3.6
0.58
0.96
2.65
5.00
11.00
1.10
2.00
5.60
12.00 27.00
RTC(2) clocked by LSE
bypassed at 32768 Hz,
RT C_CALR.LPCAL = 1
1.8
0.28
0.47
1.40
3.35
8.50
0.62
1.10
3.60
8.40
22.00
2.4
0.30
0.50
1.50
3.45
8.75
0.67
1.20
3.90
8.70
22.00
3.0
0.32
0.56
1.70
3.75
9.25
0.74
1.40
4.30
9.50
24.00
3.3
0.40
0.68
1.95
4.10
9.80
0.93
1.70
5.00
11.00 25.00
3.6
0.58
0.96
2.40
4.80
11.00
1.40
2.40
6.20
13.00 28.00
RTC(2) clocked by LSE
quartz in low-drive
1.8
0.45
0.65
1.60
3.50
8.75
-
-
-
-
-
2.4
0.51
0.73
1.70
3.65
9.00
-
-
-
-
-
3.0
0.59
0.83
1.85
3.95
9.45
-
-
-
-
-
3.3
0.69
0.98
2.10
4.30
10.00
-
-
-
-
-
3.6
0.89
1.30
2.60
5.00
11.00
-
-
-
-
-



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