96

.025" NPN Phototransistors

IRT Long T-1 (3 mm) Plastic Package

VTT3423LA, 4LA, 5LA

CASE 50A

LONG T-1 (3 mm)

CHIP TYPE: 25T

PRODUCT DESCRIPTION

A small area high speed NPN silicon phototransistor in a

3 mm diameter, lensed plastic package. The package

material transmits infrared and blocks visible light. These

devices are spectrally and mechanically matched to the

VTE33xxLA series of IREDs.

ABSOLUTE MAXIMUM RATINGS

(@ 25°C unless otherwise noted)

Maximum Temperatures

Storage Temperature:

-40°C to 100°C

Operating Temperature:

-40°C to 100°C

Continuous Power Dissipation:

50 mW

Derate above 30°C:

0.71 mW/°C

Maximum Current:

25 mA

Lead Soldering Temperature:

260°C

(1.6 mm from case, 5 sec. max.)

Refer to General Product Notes, page 2.

Part Number

Light Current

Dark Current

Collector

Breakdown

Emitter

Breakdown

Saturation

Voltage

Rise/Fall Time

Angular

Response

θ

1/2

mA

H

H = 0

H = 0

H = 0

H = 400 fc

Min.

Max.

(nA)

Max.

(Volts)

Volts, Min.

Volts, Min.

Volts, Max.

µsec, Typ.

Typ.

VTT3423LA

1.0

—

20 (1)

100

10

30

5.0

0.25

3.0

±10°

VTT3424LA

2.0

—

20 (1)

100

10

30

5.0

0.25

4.0

±10°

VTT3425LA

3.0

—

20 (1)

100

10

30

5.0

0.25

5.0

±10°

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto