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STM32H753AI Folha de dados(PDF) 234 Page - STMicroelectronics |
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STM32H753AI Folha de dados(HTML) 234 Page - STMicroelectronics |
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234 / 361 page ![]() Electrical characteristics (rev V) STM32H753xI 234/360 DS12117 Rev 8 Low-speed internal (LSI) RC oscillator DVDD (CSI) CSI oscillator frequency drift over VDD VDD = 1.62 to 3.6 V - − 0.06 0.06 % tsu(CSI) CSI oscillator startup time - - 1 2 µs tstab(CSI) CSI oscillator stabilization time (to reach ±3% of fCSI) - - - 4 cycle IDD(CSI) CSI oscillator power consumption - - 23 30 µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization. Table 144. CSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 145. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.3 V, TJ = 25 °C 31.4(1) 1. Guaranteed by test in production. 32 32.6(1) kHz TJ = –40 to 110 °C, VDD = 1.62 to 3.6 V 29.76(2) 2. Guaranteed by characterization results. - 33.6(2) TJ = –40 to 125 °C, VDD = 1.62 to 3.6 V 29.4 - 33.6 tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - - 80 130 µs tstab(LSI)(3) LSI oscillator stabilization time (5% of final value) - - 120 170 IDD(LSI)(3) LSI oscillator power consumption - - 130 280 nA |
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