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STM32469VG Folha de dados(PDF) 151 Page - STMicroelectronics

Nome de Peças STM32469VG
Descrição Electrónicos  Arm® Cortex®-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/3844KB RAM, USB OTG HS/FS, Ethernet, FMC, dual Quad-SPI, Graphical accelerator, Camera IF, LCD-TFT & MIPI DSI
PDF  220 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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DS11189 Rev 7
151/220
STM32F469xx
Electrical characteristics
191
Figure 49. USB OTG full speed timings: definition of data signal rise and fall time
USB high speed (HS) characteristics
Unless otherwise specified, the parameters given in Table 72 for ULPI are derived from
tests performed under the ambient temperature, fHCLK frequency summarized in Table 71
and VDD supply voltage conditions summarized in Table 70, with the following configuration:
output speed set to OSPEEDRy[1:0] = 11, unless otherwise specified
capacitive load C = 20 pF / 15 pF, unless otherwise specified
measurement points at CMOS levels: 0.5 VDD.
Refer to Section 5.3.20 for more details on the input/output characteristics.
Table 69.
USB OTG full speed electrical characteristics(1)
1. Guaranteed by design.
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
tr
Rise time(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF
420
ns
tf
Fall time(2)
CL = 50 pF
4
20
trfm
Rise/ fall time matching
tr / tf
90
110
%
VCRS
Output signal crossover voltage
-
1.3
2.0
V
ZDRV
Output driver impedance(3)
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.
Driving
high or low
28
44
Table 70. USB HS DC electrical characteristics
Symbol
Parameter
Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1)
Unit
Input level
VDD
USB OTG HS operating voltage
1.7
3.6
V
ai14137b
Cross over
points
Differential
data lines
VCRS
VSS
tf
tr



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