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STM32L552VCU6QXXX Folha de dados(PDF) 264 Page - STMicroelectronics |
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STM32L552VCU6QXXX Folha de dados(HTML) 264 Page - STMicroelectronics |
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264 / 340 page  Electrical characteristics STM32L552xx 264/340 DS12737 Rev 6 en Voltage noise density Normal mode at 1 kHz, Output loaded with 4 kΩ -500 - nV/√Hz Low-power mode at 1 kHz, Output loaded with 20 kΩ -600 - Normal mode at 10 kHz, Output loaded with 4 kΩ -180 - Low-power mode at 10 kHz, Output loaded with 20 kΩ -290 - IDDA(OPAMP)(2) OPAMP consumption from VDDA Normal mode no Load, quiescent mode - 120 260 µA Low-power mode - 45 100 1. Guaranteed by design, unless otherwise specified. 2. Guaranteed by characterization results. 3. Mostly I/O leakage, when used in analog mode. Refer to Ilkg parameter in Table 102: I/O static characteristics. 4. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 Table 119. OPAMP characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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