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STM32L552VCU6QTR Folha de dados(PDF) 226 Page - STMicroelectronics

Nome de Peças STM32L552VCU6QTR
Descrição Electrónicos  Ultra-low-power Arm® Cortex®-M33 32-bit MCUTrustZone®FPU, 165 DMIPS, up to 512 KB Flash memory, 256 KB SRAM, SMPS
PDF  340 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L552VCU6QTR Folha de dados(HTML) 226 Page - STMicroelectronics

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Electrical characteristics
STM32L552xx
226/340
DS12737 Rev 6
5.3.11
Flash memory characteristics
Table 95. Flash memory characteristics(1)
1. Guaranteed by design.
Symbol
Parameter
Conditions
Typ
Max
Unit
tprog
64-bit programming time
-
81.69
83.35
µs
tprog_row
One row (64 double
word) programming time
Normal programming
2.61
2.67
ms
Fast programming
NA
NA
tprog_page
One page (4 Kbytes)
programming time
Normal programming
20.91
21.34
Fast programming
NA
NA
tERASE
Page (4 Kbytes) erase
time
-
22.02
24.47
tprog_bank
One bank (1 Mbyte)
programming time
Normal programming
2.68
2.73
s
Fast programming
NA
NA
tME
Mass erase time
(one or two banks)
-
22.13
24.59
ms
IDD
Average consumption
from VDD
Write mode
3.1
NA
mA
Erase mode
3.1
NA
Maximum current (peak)
Write mode
NA
NA
Erase mode
NA
NA
Table 96. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
1. Guaranteed by characterization results.
Unit
NEND
Endurance
TA = –40 to +105 °C
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
15
1 kcycle(2) at TA = 125 °C
7
10 kcycles(2) at TA = 55 °C
30
10 kcycles(2) at TA = 85 °C
15
10 kcycles(2) at TA = 105 °C
10



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