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STM32G474PBY3XXX Folha de dados(PDF) 168 Page - STMicroelectronics |
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STM32G474PBY3XXX Folha de dados(HTML) 168 Page - STMicroelectronics |
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168 / 236 page  Electrical characteristics STM32G474xB STM32G474xC STM32G474xE 168/236 DS12288 Rev 5 Figure 34. OPAMP noise density @ 25°C 1. Guaranteed by design, unless otherwise specified. 2. Data guaranteed on normal and high speed mode unless otherwise specified. 3. Guaranteed by characterization results. 4. Valid also for inverting gain configuration with external bias. 5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 MSv62525V1 |
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