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AM29DL400BT-70FEB Folha de dados (PDF) - Advanced Micro Devices

AM29DL400BT-70FEB Datasheet PDF - Advanced Micro Devices
Nome de Peças AM29DL400BT-70FEB
Download  AM29DL400BT-70FEB Download

Tamanho do Arquivo   534.88 Kbytes
página   42 Pages
Fabricante Electrônico  AMD [Advanced Micro Devices]
Página de início  http://www.amd.com
Logo AMD - Advanced Micro Devices
Descrição Electrónicos 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

AM29DL400BT-70FEB Datasheet (PDF)

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AM29DL400BT-70FEB Datasheet PDF - Advanced Micro Devices

Nome de Peças AM29DL400BT-70FEB
Download  AM29DL400BT-70FEB Click to download

Tamanho do Arquivo   534.88 Kbytes
página   42 Pages
Fabricante Electrônico  AMD [Advanced Micro Devices]
Página de início  http://www.amd.com
Logo AMD - Advanced Micro Devices
Descrição Electrónicos 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

AM29DL400BT-70FEB Folha de dados (HTML) - Advanced Micro Devices

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AM29DL400BT-70FEB Detalhes do produto

GENERAL DESCRIPTION
The Am29DL400B is an 4 Mbit, 3.0 volt-only flash memory device, organized as 262,144 words or 524,288 bytes. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7. This device requires only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
■ Simultaneous Read/Write operations
    — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
    — Zero latency between read and write operations
    — Read-while-erase
    — Read-while-program
■ Single power supply operation
    — 2.7 to 3.6 volt read and write operations for battery-powered applications
■ Manufactured on 0.35 µm process technology
■ High performance
    — Access times as fast as 70 ns
■ Low current consumption (typical values at 5 MHz)
    — 7 mA active read current
    — 21 mA active read-while-program or read-whileerase current
    — 17 mA active program-while-erase-suspended current
    — 200 nA in standby mode
    — 200 nA in automatic sleep mode
    — Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode
■ Flexible sector architecture
    — Two 16 Kword, two 8 Kword, four 4 Kword, and six 32 Kword sectors in word mode
    — Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and six 64 Kbyte sectors in byte mode
    — Any combination of sectors can be erased
    — Supports full chip erase
■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing multiple program command sequences
■ Sector protection
    — Hardware method of locking a sector to prevent any program or erase operation within that sector
    — Sectors can be locked in-system or via programming equipment
    — Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
    — Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip
    — Embedded Program algorithm automatically programs and verifies data at specified address
■ Minimum 1 million program/erase cycles guaranteed per sector
■ Package options
    — 44-pin SO
    — 48-pin TSOP
■ Compatible with JEDEC standards
    — Pinout and software compatible with single-power-supply flash standard
    — Superior inadvertent write protection
■ Data# Polling and Toggle Bits
    — Provides a software method of detecting program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
    — Hardware method for detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends or resumes erasing sectors to allow reading and programming in other sectors
    — No need to suspend if sector is in the other bank
■ Hardware reset pin (RESET#)
    — Hardware method of resetting the device to reading array data




Nº de peça semelhante - AM29DL400BT-70FEB

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Advanced Micro Devices
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Descrição semelhante - AM29DL400BT-70FEB

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SPANSION
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AM29LV400BT-70EI SPANSION-AM29LV400BT-70EI Datasheet
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   4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV400BT-70SC SPANSION-AM29LV400BT-70SC Datasheet
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AM29DL800B AMD-AM29DL800B Datasheet
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Sobre a Advanced Micro Devices


A Advanced Micro Devices, Inc. (AMD) é uma empresa de semicondutores multinacionais americanos com sede em Santa Clara, Califórnia.
É um principal produtor de microprocessadores, processadores gráficos e sistemas de computadores para os mercados de consumidores, comerciais e profissionais.
A AMD é conhecida por suas ofertas competitivas de CPU, incluindo as linhas de processador Ryzen e Epyc, bem como seus produtos gráficos Radeon.
Fundada em 1969, a AMD tem uma longa história no setor de tecnologia e tem sido um dos principais players nos mercados de PC e servidor.
Nos últimos anos, a empresa expandiu suas ofertas de produtos para atender à crescente demanda por poder de computação em data centers, jogos e inteligência artificial.
Com foco na inovação e tecnologia avançada, a AMD visa fornecer soluções de computação de alto desempenho a seus clientes em todo o mundo.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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