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PXAC241002FCV1R2 Folha de dados (PDF) - Cree, Inc

PXAC241002FCV1R2 Datasheet PDF - Cree, Inc
Nome de Peças PXAC241002FCV1R2
Download  PXAC241002FCV1R2 Download

Tamanho do Arquivo   279.64 Kbytes
página   8 Pages
Fabricante Electrônico  CREE [Cree, Inc]
Página de início  http://www.cree.com/
Logo CREE - Cree, Inc
Descrição Electrónicos Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz

PXAC241002FCV1R2 Datasheet (PDF)

Go To PDF Page Download Folha de dados
PXAC241002FCV1R2 Datasheet PDF - Cree, Inc

Nome de Peças PXAC241002FCV1R2
Download  PXAC241002FCV1R2 Click to download

Tamanho do Arquivo   279.64 Kbytes
página   8 Pages
Fabricante Electrônico  CREE [Cree, Inc]
Página de início  http://www.cree.com/
Logo CREE - Cree, Inc
Descrição Electrónicos Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz

PXAC241002FCV1R2 Folha de dados (HTML) - Cree, Inc

PXAC241002FCV1R2 Datasheet HTML 1Page - Cree, Inc PXAC241002FCV1R2 Datasheet HTML 2Page - Cree, Inc PXAC241002FCV1R2 Datasheet HTML 3Page - Cree, Inc PXAC241002FCV1R2 Datasheet HTML 4Page - Cree, Inc PXAC241002FCV1R2 Datasheet HTML 5Page - Cree, Inc PXAC241002FCV1R2 Datasheet HTML 6Page - Cree, Inc PXAC241002FCV1R2 Datasheet HTML 7Page - Cree, Inc PXAC241002FCV1R2 Datasheet HTML 8Page - Cree, Inc



Nº de peça semelhante - PXAC241002FCV1R2

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Descrição semelhante - PXAC241002FCV1R2

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
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Cree, Inc
PTAC240502FC CREE-PTAC240502FC Datasheet
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577Kb / 10P
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   Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
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PTF240101S INFINEON-PTF240101S Datasheet
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   Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz
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   Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
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Sobre a Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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