PTRA082808NF Folha de dados(PDF) - Cree, Inc

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PTRA082808NF Folha de dados (PDF) - Cree, Inc

PTRA082808NF Datasheet PDF - Cree, Inc


Nome de Peças	PTRA082808NF

Download	PTRA082808NF Download

Tamanho do Arquivo	604.96 Kbytes

página	10 Pages

Fabricante Electrônico	CREE [Cree, Inc]

Página de início	http://www.cree.com/

Logo

Descrição Electrónicos

Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz

PTRA082808NF Datasheet (PDF)

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Download Folha de dados

PTRA082808NF Datasheet PDF - Cree, Inc


Nome de Peças	PTRA082808NF

Download	PTRA082808NF Click to download

Tamanho do Arquivo	604.96 Kbytes

página	10 Pages

Fabricante Electrônico	CREE [Cree, Inc]

Página de início	http://www.cree.com/

Logo

Descrição Electrónicos	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz

PTRA082808NF Folha de dados (HTML) - Cree, Inc

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Nº de peça semelhante - PTRA082808NF

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Infineon Technologies A...	PTRA082808NF	534Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz Rev. 04.1, 2018-01-30
WOLFSPEED, INC.	PTRA082808NF	677Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
WOLFSPEED, INC.	PTRA082808NF-V1-R5	677Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27

Descrição semelhante - PTRA082808NF

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Infineon Technologies A...	PTRA082808NF	534Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz Rev. 04.1, 2018-01-30
WOLFSPEED, INC.	PTRA082808NF	677Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
Infineon Technologies A...	PTFC262808SV	180Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02
Infineon Technologies A...	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22
Cree, Inc	PTFC262808FV	806Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
Infineon Technologies A...	PTFB082817FH	667Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz Rev. 02, 2010-12-13
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
Infineon Technologies A...	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16

Sobre a Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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