| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |

ON Semiconductor
|
NTMS4816N |
94Kb/5P |
Power MOSFET 30 V, 11 A, N-Channel, SO-8 December, 2007 - Rev. 0 |
| NTLJS14D0P03P8Z |
378Kb/8P |
MOSFET ??Single, P-Channel, POWERTRENCH -30 V, -11 A, 13.5 m May, 2021-Rev. 0 |
| FCPF400N80ZL1-F154 |
303Kb/10P |
MOSFET – N-Channel, SUPERFET II 800 V, 11 A, 400 m December, 2020 - Rev. 0 |
| NVLJWS011N04CL |
170Kb/7P |
MOSFET ??Power, Single N-Channel 40 V, 11 m, 37 A March, 2022 ??Rev. 0 |
| NVLJWS070N06CL |
160Kb/7P |
MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A July, 2022 - Rev. 0 |
| NTPF450N80S3Z |
207Kb/9P |
MOSFET ??Power,N-Channel, SUPERFET III 800 V, 450 m, 11 A August, 2020-Rev. 0 |
| NXH011F120M3F2PTHG |
518Kb/12P |
Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package November, 2023 - Rev. P1 |