| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |

Fairchild Semiconductor
|
FDP13N50F |
621Kb/9P |
N-Channel MOSFET 500V, 12A, 0.54廓 |
| FDP13N50F |
414Kb/9P |
N-Channel MOSFET 500V, 12A, 0.54廓 |
| 2N6769 |
137Kb/5P |
N-Channel Power MOSFETs, 12A, 450V/500V |
| FDPF680N10T |
696Kb/8P |
N-Channel PowerTrench짰 MOSFET 100V, 12A, 68m廓 |
| RFD3055SM9A |
424Kb/8P |
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
| IRF230-233 |
177Kb/6P |
N-Channel Power MOSFETs, 12A, 150-200 V |
| RFP3055 |
418Kb/8P |
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
| RFP12N10L |
361Kb/6P |
12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET |
| HUFA76407P3 |
209Kb/10P |
12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76407P3 |
209Kb/10P |
12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| FDMA1430JP |
222Kb/8P |
Max rDS(on) = 90 m廓 at VGS = -4.5 V, ID = -2.9 A |
| FDS89161LZ |
251Kb/7P |
Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A |
| FDMS86252 |
268Kb/7P |
Max rDS(on) = 51 m廓 at VGS = 10 V, ID = 4.6 A |
| FDPF16N50UT |
826Kb/9P |
R DS(on) = 370 m廓 ( Typ.) @ VGS = 10 V, ID = 7.5 A |