| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |

Infineon Technologies A...
|
PMB2314T |
475Kb/14P |
Prescaler Circuit 2.1 GHz V 1.2, December 2003 |
| ESD134-B1-W0201 |
820Kb/15P |
Bi-directional TVS device, 2.1 V, 0.25 pF, 0201 v2.0 2019-08-09 |
| ESD120-B1-W0201 |
2Mb/14P |
Protection device Bi-directional, 2.1 V, 0.28 pF, 0201, RoHS and halogen free compliant v1.0 2019-06-24 |
| BGS14MPA9 |
540Kb/18P |
High Linearity, High Power SP4T RF Switch with MIPI 2.0 Revision 2.1 2018-11-21 |
| BGS14MA11 |
529Kb/17P |
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications Revision 2.1 2018-07-17 |
| BGS16MA12 |
555Kb/16P |
MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications Revision 1.1 2018-09-10 |
| BGS18MA12 |
556Kb/16P |
MIPI 2.0 SP8T switch for LTE diversity, Tx and LAA applications Revision 1.1 2018-09-10 |
| PTF180101M |
314Kb/8P |
High Power RF LDMOS Field Effect Transistor 10 W, 1.0 ??2.0 GHz Rev. 05.1, 2009-02-18 |
| BGS18MA14 |
612Kb/16P |
MIPI 2.0 SP8T switch for LTE Rx and Tx applications up to 3.8GHz Revision 2.4 2018-09-10 |
| S76HS512TC0 |
218Kb/16P |
512Mb SEMPER™ Flash and 64Mb HYPERRAM™ 2.0 HYPERBUS™ interface, multi-chip package, 1.8 V/3.0 V Rev. B 2022-09-21 |