1. General Information

️· Device: AD8065/AD8066 (These are two variants of the same device)
️· Function: High-speed, low-noise operational amplifiers.
️· Document Revision: Rev. E
️· Pages Referenced: Pages 4, 28, 5, 6.

2. Electrical Specifications (Table Formatted)

These are split into sections based on the power supply voltage.

2.1. Specifications @ V_S = 5V (Referenced on Page 3)

Parameter	Conditions	Min	Typ	Max	Unit
-3 dB Bandwidth	G = +1, VO = 0.2 V p-p (AD8065)	125			MHz
-3 dB Bandwidth	G = +1, VO = 0.2 V p-p (AD8066)	155			MHz
Input Overdrive Recovery Time	G = +2, VO = 0.2 V p-p	110			ns
Output Recovery Time	G = +2, VO = 2 V p-p	175			ns
Slew Rate	G = +1	43			V/µs
Settling Time to 0.1%	G = +1	175			ns
SFDR	fC = 1 MHz, G = +2, VO = 2 V p-p	–65			dBc
Third-Order Intercept	fC = 5 MHz, G = +2, VO = 2 V p-p	–50			dBc
Input Voltage Noise	fC = 10 MHz	22			dBc
Input Current Noise	f = 10 kHz	0.6			nV/√Hz
Differential Gain Error	NTSC, G = +2, RL = 150 Ω	0.13			%
Differential Phase Error	NTSC, G = +2, RL = 150 Ω	0.16			Degrees
Input Offset Voltage	VCM = 1.0 V, SOIC Package	0.4		1.5	mV
Input Offset Voltage Drift	TMIN to TMAX	1.5			µV/ºC
Input Bias Current		1			pA
Input Offset Current		17			pA
Open-Loop Gain	VO = 1 V to 4 V (AD8065)	100			dB
Open-Loop Gain	VO = 1 V to 4 V (AD8066)	113			dB
Common-Mode Input Impedance					GΩ		pF
Differential Input Impedance					GΩ		pF
Input Common-Mode Voltage Range	VCM= 1 V to 2 V				V
Common-Mode Rejection Ratio					dB

2.2. Specifications @ V_S = 26.4V (Referenced on Page 4)

Parameter	Conditions	Min	Typ	Max	Unit
-3 dB Bandwidth	G = +1, VO = 0.2 V p-p (AD8065)	125			MHz
-3 dB Bandwidth	G = +1, VO = 0.2 V p-p (AD8066)	155			MHz
Input Overdrive Recovery Time	G = +2, VO = 0.2 V p-p	110			ns
Output Recovery Time	G = +2, VO = 2 V p-p	175			ns
Slew Rate	G = +1	43			V/µs
Settling Time to 0.1%	G = +1	175			ns
SFDR	fC = 1 MHz, G = +2, VO = 2 V p-p	–65			dBc
Third-Order Intercept	fC = 5 MHz, G = +2, VO = 2 V p-p	–50			dBc
Input Voltage Noise	fC = 10 MHz	22			dBc
Input Current Noise	f = 10 kHz	0.6			nV/√Hz
Differential Gain Error	NTSC, G = +2, RL = 150 Ω	0.13			%
Differential Phase Error	NTSC, G = +2, RL = 150 Ω	0.16			Degrees
Input Offset Voltage	VCM = 1.0 V, SOIC Package	0.4		1.5	mV
Input Offset Voltage Drift	TMIN to TMAX	1.5			µV/ºC
Input Bias Current		1			pA
Input Offset Current		17			pA
Open-Loop Gain	VO = 1 V to 4 V (AD8065)	100			dB
Open-Loop Gain	VO = 1 V to 4 V (AD8066)	113			dB
Common-Mode Input Impedance					GΩ		pF
Differential Input Impedance					GΩ		pF
Input Common-Mode Voltage Range	VCM= 1 V to 2 V				V
Common-Mode Rejection Ratio					dB

3. Absolute Maximum Ratings (Page 3)

Parameter	Rating	Unit
Supply Voltage	26.4	V
Power Dissipation	See Figure 3 (Not provided here)
Common-Mode Input Voltage	VEE − 0.5 V to VCC + 0.5 V	V
Differential Input Voltage	1.8	V
Storage Temperature	−65°C to +125°C	°C
Operating Temperature Range	−40°C to +85°C	°C
Lead Temperature Range (Soldering)	300	°C

4. ESD Caution (Page 3)

️· The device is ESD sensitive. Proper precautions are recommended to avoid performance degradation or loss of functionality.

This detailed summary should provide a comprehensive overview of the information contained within the provided text. The "See Figure 3" comment regarding Power Dissipation means that a graph would be needed to clarify those limits.