BUZ77A / Inchange Semiconductor Company Limited

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Part No.	BUZ77A
Manufacturer	ISC
Size	66 Kbytes
Pages	2 pages
Description	Easy driver for cost effective application

Datasheet Summary with AI

# isc N-Channel MOSFET Transistor BUZ77A

## Description

· High speed switching
· Low RDS(ON)
· Easy driver for cost-effective applications

## Applications

· Automotive power actuator drivers
· Motor controls
· DC-DC converters

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 600 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-continuous@ TC=37℃ 2.1 A

Ptot Total Dissipation@TC=25℃ 40 W

Tj Max. Operating Junction Temperature -55-150 ℃

Tstg Storage Temperature Range -55-150 ℃

## Thermal Characteristics

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 75 ℃/W

## Electrical Characteristics (Tc=25℃)

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V

VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 4 V

RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 1.7 4 Ω

IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS= 600VGS= 0 1 uA

VSD Diode Forward Voltage IF= 5.4A;VGS= 0 1.3 V

## Website

· [www.iscsemi.cn](http://www.iscsemi.cn)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage (VGS=0)	600	V
VGS	Gate-Source Voltage	±20	V
ID	Drain Current-continuous@ TC=37℃	2.1	A
Ptot	Total Dissipation@TC=25℃	40	W
Tj	Max. Operating Junction Temperature	-55-150	℃
Tstg	Storage Temperature Range	-55-150	℃

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	1.67	℃/W
Rth j-a	Thermal Resistance, Junction to Ambient	75	℃/W

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID= 0.25mA	600		V
VGS(TH)	Gate Threshold Voltage	VDS= VGS; ID= 1mA	2.1	4	V
RDS(ON)	Drain-Source On-stage Resistance	VGS= 10V; ID= 1.7		4	Ω
IGSS	Gate Source Leakage Current	VGS= ±20V;VDS= 0		±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS= 600VGS= 0		1	uA
VSD	Diode Forward Voltage	IF= 5.4A;VGS= 0		1.3	V