# BUZ205 N-Channel MOSFET Transistor

## Description

· High-speed switching
· Low Rds(on)
· Easy driver for cost-effective applications

## Applications

· Automotive power actuator drivers
· Motor controls
· DC-DC converters

## Absolute Maximum Ratings (Ta=25℃)

· VDSS (Drain-Source Voltage): 400 V
· VGS (Gate-Source Voltage): ±20 V
· ID (Drain Current): 6 A
· Ptot (Total Dissipation): 75 W
· Tj (Junction Temperature): -55 to 150 °C
· Tstg (Storage Temperature): -55 to 150 °C

## Thermal Characteristics

· Rth j-c (Junction-to-Case): 1.67 °C/W
· Rth j-a (Junction-to-Ambient): 75 °C/W

## Electrical Characteristics (TC=25℃)

· V(BR)DSS (Breakdown Voltage): 400 V
· VGS(TH) (Threshold Voltage): 2.1 to 4 V
· RDS(ON) (Drain-Source Resistance): ≤ 1 Ω
· IGSS (Gate Leakage Current): ≤ 100 nA
· IDSS (Zero Gate Current Drain Current): ≤ 250 uA
· VSD (Diode Forward Voltage): ≤ 1.6 V

## Website

· www.iscsemi.cn