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PXT8050 Datasheet with Chat AI

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Part No.	PXT8050
Manufacturer	DGNJDZ
Size	1Mb
Pages	2 pages
Description	SOT-89-3L Plastic-Encapsulate Transistors

Datasheet Summary with AI

# PXT8050 NPN Transistor

## Features and Markings

️· Complement to PXT8550
️· Marking: Y1

## Maximum Ratings

️· VCBO: 40V (Collector-Base Voltage)
️· VCEO: 25V (Collector-Emitter Voltage)
️· VEBO: 5V (Emitter-Base Voltage)
️· IC: 1.5A (Collector Current - Continuous)
️· PC: 0.5W (Collector Power Dissipation)
️· TJ: 150℃ (Junction Temperature)
️· Tstg: -55~150℃ (Storage Temperature)

## Electrical Characteristics

️· V(BR)CBO: 40V (Collector-Base Breakdown Voltage)
️· V(BR)CEO: 25V (Collector-Emitter Breakdown Voltage)
️· V(BR)EBO: 5V (Emitter-Base Breakdown Voltage)
️· ICBO: 0.1μA (Collector Cut-off Current)
️· ICEO: 0.1μA (Emitter Cut-off Current)
️· IEBO: 0.1μA (Emitter Cut-off Current)
️· hFE(1): 85-400 (DC Current Gain, VCE=1V, IC=100mA)
️· hFE(2): 40 (DC Current Gain, VCE=1V, IC=800mA)
️· VCE(sat): 0.5V (Collector-Emitter Saturation Voltage, IC=800mA, IB=80mA)
️· VBE(sat): 1.2V (Base-Emitter Saturation Voltage, IC=800mA, IB=80mA)
️· VBE: 1V (Base-Emitter Voltage, VCE=1V, IC=10mA)
️· VBEF: 1.55V (Base-Emitter Positive Favor Voltage, IB=1A)
️· fT: 100MHz (Transition Frequency, VCE=10V, IC=50mA, f=30MHz)
️· Cob: 15pF (Output Capacitance, VCB=10V, IE=0, f=1MHz)

## Classification of hFE(1)

Rank B C D D3

Range 85-160 120-200 160-300 300-400

Package: SOT-89-3L
1. Base
2. Collector
3. Emitter