# UT6302 Power MOSFET

## Overview
️· P-Channel Enhancement Mode MOSFET
️· Ideal for portable electronics & PCMCIA cards

## Features
️· Extremely-Low On-Resistance
️· Fast Switching Speed

## Ordering Information
️· UT6302G-AE2-R: SOT-23-3 Package, Tape Reel
️· UT6302G-AE3-R: SOT-23 Package, Tape Reel
️· Pin Assignment: S=Source, G=Gate, D=Drain

## Absolute Maximum Ratings
️· Drain-Source Voltage (VDSS): -20V
️· Gate-Source Voltage (VGSS): ±12V
️· Continuous Drain Current (ID): -0.78A (at 25°C)
️· Pulsed Drain Current (IDM): -4.9A
️· Power Dissipation (PD): 540mW (derating of 4.3mW/°C above 25°C)
️· Junction Temperature (TJ): +150°C
️· Storage Temperature (TSTG): -55°C to +150°C

## Electrical Characteristics (TJ = 25°C)
️· OFF Characteristics
- Drain-Source Breakdown Voltage (BVDSS): -20V
- Drain-Source Leakage Current (IDSS): -1.0 µA
- Gate-Source Leakage Current (IGSS): ±100nA
️· ON Characteristics
- Gate Threshold Voltage (VGS(TH)): -0.70 to -1.5V
- Static Drain-Source On-Resistance (RDS(ON)): 0.60Ω (VGS=-4.5V, ID=-0.61A), 0.90Ω (VGS=-2.7V, ID=-0.31A)
️· Dynamic Parameters
- Input Capacitance (CISS): 97pF
- Output Capacitance (COSS): 53pF
- Reverse Transfer Capacitance (CRSS): 28pF
️· Switching Parameters
- Total Gate Charge (QG): 2.4-3.6nC
- Gate Source Charge (QGS): 0.56-0.84nC
- Turn-ON Delay Time (tD(ON)): 13nS
- Turn-ON Rise Time (tR): 18nS
- Turn-OFF Delay Time (tD(OFF)): 22nS
- Turn-OFF Fall-Time (tF): 22nS
️· Source-Drain Diode
- Forward Voltage (VSD): -1.2V
- Forward Current (IS): -0.54A
- Pulsed Forward Current (ISM): -4.9A
- Reverse Recovery Time (trr): 35-53nS
- Reverse Recovery Charge (QRR): 26-39nC

## Thermal Data
️· Junction to Ambient (θJA): 230°C/W (Surface Mounted on FR-4 Board)