# ESJC50F08 - 500mA 8kV HIGH VOLTAGE DIODES

## Features

️· High speed switching
️· High Current
️· High surge resistivity for CRT discharge
️· High reliability design
️· High Voltage

## Applications

️· X light Power supply
️· Laser
️· Voltage doubler circuit
️· Microwave emission power
️· Monitors
️· Static electricity dust collectors
️· Laser power supplies

## Maximum Ratings

️· Repetitive Peak Reverse Voltage (VRRM): 8.0 kV
️· Average Output Current (IO): 500 mA
️· Surge Current (IFSM): 30 A (peak)
️· Junction Temperature (Tj): 120 °C
️· Allowable Operation Case Temperature (Tc): 120 °C
️· Storage Temperature (Tstg): -40 to +125 °C

## Electrical Characteristics (Ta=25°C unless otherwise specified)

️· Maximum Forward Voltage Drop (VF): 14 V (at 25°C, IF = IF(AV))
️· Maximum Reverse Current (IR1): 5.0 uA (at 25°C, VR = VRRM)
️· Maximum Reverse Current (IR2): 50 uA (at 100°C, VR = VRRM)
️· Maximum Reverse Recovery Time (Trr): 100 ns (at 25°C)
️· Junction Capacitance (Cj): -- pF (at 25°C, VR = 0V, f = 1MHz)

## Physical Characteristics

️· Cathode Mark: HVGT; ESJC50F08
️· Package: DO-721