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BFS20 Datasheet with Chat AI
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  • # Example questions: ➢ What is the maximum collector-base breakdown voltage (vbrcbo) specified in the datasheet?
    ➢ What is the typical dc current gain (hfe) when the collector current (ic) is 7ma and the collector-emitter voltage (vce) is 10v?
    ➢ What is the operating and storage junction temperature range (tj, tstg) for this transistor?

  • Part No.BFS20_15
    ManufacturerSECOS
    Size104 Kbytes
    Pages1 page
    DescriptionPlastic-Encapsulate Transistor
    Datasheet Summary with AI

    ## SUMMARY: Datasheet for a Transistor (likely NPN)

    This document is a datasheet for a small signal transistor, most likely an NPN type, packaged in a SOT-23 surface mount package. Here’s a breakdown of the key information:

    1. Device Identification & Features:

    ️· Marking: G11 (Identifies the specific transistor model)
    ️· Package: SOT-23
    ️· Features (from text): Not explicitly stated, but it's a general-purpose small signal transistor.
    ️· RoHS Compliance: A suffix "-C" indicates a halogen-free version.

    2. Absolute Maximum Ratings (implied – not explicitly stated, but standard for transistors):

    ️· Collector-Base Voltage (Vcb): Determined by the breakdown voltage specification (30V)
    ️· Collector-Emitter Voltage (Vce): Determined by the breakdown voltage specification (30V)
    ️· Emitter-Base Voltage (Veb): (Likely limited to around 5-6V)
    ️· Collector Current (Ic): (Not explicitly specified, but generally limited to a few hundred milliamps for this type of transistor)
    ️· Power Dissipation (Pd): (Not specified, depends on the package and application)

    3. Electrical Characteristics (Tamb = 25°C):

    ️· V(BR)CBO (Collector-Base Breakdown Voltage): 30V
    ️· V(BR)CEO (Collector-Emitter Breakdown Voltage): 20V
    ️· V(BR)EBO (Emitter-Base Breakdown Voltage): 4V
    ️· ICBO (Collector Cut-Off Current): 0.1 µA
    ️· ICEO (Collector Cut-Off Current): 0.1 µA
    ️· IEBO (Emitter Cut-Off Current): 0.1 µA
    ️· hFE (DC Current Gain): 40-120 (Typical, dependent on collector current)
    ️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.3V (at a specific IC/IB condition)
    ️· VBE(on) (Base-Emitter On Voltage): 0.9V (at a specific IC/VCE condition)
    ️· fT (Transition Frequency): 275 MHz (Indicates the transistor’s high-frequency performance)

    4. Operating Conditions:

    ️· Tamb (Ambient Temperature): 25°C is used for the specified characteristics. The datasheet likely provides a range of operating temperatures.

    5. Physical Dimensions:

    ️· Package: SOT-23 (Small outline transistor)

    6. Revision Information:

    ️· Date: 01-Jun-2002
    ️· Revision: A
    ️· Page: 1 of 1



    In Summary: This datasheet provides the necessary electrical and physical characteristics to determine if this transistor is suitable for a specific electronic circuit application. It’s a useful component for general-purpose amplification and switching.

    ## SUMMARY: Datasheet for a Transistor (likely NPN)

    This document is a datasheet for a small signal transistor, most likely an NPN type, packaged in a SOT-23 surface mount package. Here’s a breakdown of the key information:

    1. Device Identification & Features:

    ️· Marking: G11 (Identifies the specific transistor model)
    ️· Package: SOT-23
    ️· Features (from text): Not explicitly stated, but it's a general-purpose small signal transistor.
    ️· RoHS Compliance: A suffix "-C" indicates a halogen-free version.

    2. Absolute Maximum Ratings (implied – not explicitly stated, but standard for transistors):

    ️· Collector-Base Voltage (Vcb): Determined by the breakdown voltage specification (30V)
    ️· Collector-Emitter Voltage (Vce): Determined by the breakdown voltage specification (30V)
    ️· Emitter-Base Voltage (Veb): (Likely limited to around 5-6V)
    ️· Collector Current (Ic): (Not explicitly specified, but generally limited to a few hundred milliamps for this type of transistor)
    ️· Power Dissipation (Pd): (Not specified, depends on the package and application)

    3. Electrical Characteristics (Tamb = 25°C):

    ️· V(BR)CBO (Collector-Base Breakdown Voltage): 30V
    ️· V(BR)CEO (Collector-Emitter Breakdown Voltage): 20V
    ️· V(BR)EBO (Emitter-Base Breakdown Voltage): 4V
    ️· ICBO (Collector Cut-Off Current): 0.1 µA
    ️· ICEO (Collector Cut-Off Current): 0.1 µA
    ️· IEBO (Emitter Cut-Off Current): 0.1 µA
    ️· hFE (DC Current Gain): 40-120 (Typical, dependent on collector current)
    ️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.3V (at a specific IC/IB condition)
    ️· VBE(on) (Base-Emitter On Voltage): 0.9V (at a specific IC/VCE condition)
    ️· fT (Transition Frequency): 275 MHz (Indicates the transistor’s high-frequency performance)

    4. Operating Conditions:

    ️· Tamb (Ambient Temperature): 25°C is used for the specified characteristics. The datasheet likely provides a range of operating temperatures.

    5. Physical Dimensions:

    ️· Package: SOT-23 (Small outline transistor)

    6. Revision Information:

    ️· Date: 01-Jun-2002
    ️· Revision: A
    ️· Page: 1 of 1



    In Summary: This datasheet provides the necessary electrical and physical characteristics to determine if this transistor is suitable for a specific electronic circuit application. It’s a useful component for general-purpose amplification and switching.

    Part No.BFS20_15
    ManufacturerSECOS
    Size104 Kbytes
    Pages1 page
    DescriptionPlastic-Encapsulate Transistor
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