| Os motores de busca de Datasheet de Componentes eletrônicos |
|
The question interval is too short.
Please try again in a few seconds.
Hello, Please ask a question about BFS20_15 Datasheet
# Example questions:
➢ What is the maximum collector-base breakdown voltage (vbrcbo) specified in the datasheet?
➢ What is the typical dc current gain (hfe) when the collector current (ic) is 7ma and the collector-emitter voltage (vce) is 10v?
➢ What is the operating and storage junction temperature range (tj, tstg) for this transistor?
## SUMMARY: Datasheet for a Transistor (likely NPN)
This document is a datasheet for a small signal transistor, most likely an NPN type, packaged in a SOT-23 surface mount package. Here’s a breakdown of the key information:
1. Device Identification & Features:
️· Marking: G11 (Identifies the specific transistor model)
️· Package: SOT-23
️· Features (from text): Not explicitly stated, but it's a general-purpose small signal transistor.
️· RoHS Compliance: A suffix "-C" indicates a halogen-free version.
2. Absolute Maximum Ratings (implied – not explicitly stated, but standard for transistors):
️· Collector-Base Voltage (Vcb): Determined by the breakdown voltage specification (30V)
️· Collector-Emitter Voltage (Vce): Determined by the breakdown voltage specification (30V)
️· Emitter-Base Voltage (Veb): (Likely limited to around 5-6V)
️· Collector Current (Ic): (Not explicitly specified, but generally limited to a few hundred milliamps for this type of transistor)
️· Power Dissipation (Pd): (Not specified, depends on the package and application)
3. Electrical Characteristics (Tamb = 25°C):
️· V(BR)CBO (Collector-Base Breakdown Voltage): 30V
️· V(BR)CEO (Collector-Emitter Breakdown Voltage): 20V
️· V(BR)EBO (Emitter-Base Breakdown Voltage): 4V
️· ICBO (Collector Cut-Off Current): 0.1 µA
️· ICEO (Collector Cut-Off Current): 0.1 µA
️· IEBO (Emitter Cut-Off Current): 0.1 µA
️· hFE (DC Current Gain): 40-120 (Typical, dependent on collector current)
️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.3V (at a specific IC/IB condition)
️· VBE(on) (Base-Emitter On Voltage): 0.9V (at a specific IC/VCE condition)
️· fT (Transition Frequency): 275 MHz (Indicates the transistor’s high-frequency performance)
4. Operating Conditions:
️· Tamb (Ambient Temperature): 25°C is used for the specified characteristics. The datasheet likely provides a range of operating temperatures.
5. Physical Dimensions:
️· Package: SOT-23 (Small outline transistor)
6. Revision Information:
️· Date: 01-Jun-2002
️· Revision: A
️· Page: 1 of 1
In Summary: This datasheet provides the necessary electrical and physical characteristics to determine if this transistor is suitable for a specific electronic circuit application. It’s a useful component for general-purpose amplification and switching.
## SUMMARY: Datasheet for a Transistor (likely NPN)
This document is a datasheet for a small signal transistor, most likely an NPN type, packaged in a SOT-23 surface mount package. Here’s a breakdown of the key information:
1. Device Identification & Features:
️· Marking: G11 (Identifies the specific transistor model)
️· Package: SOT-23
️· Features (from text): Not explicitly stated, but it's a general-purpose small signal transistor.
️· RoHS Compliance: A suffix "-C" indicates a halogen-free version.
2. Absolute Maximum Ratings (implied – not explicitly stated, but standard for transistors):
️· Collector-Base Voltage (Vcb): Determined by the breakdown voltage specification (30V)
️· Collector-Emitter Voltage (Vce): Determined by the breakdown voltage specification (30V)
️· Emitter-Base Voltage (Veb): (Likely limited to around 5-6V)
️· Collector Current (Ic): (Not explicitly specified, but generally limited to a few hundred milliamps for this type of transistor)
️· Power Dissipation (Pd): (Not specified, depends on the package and application)
3. Electrical Characteristics (Tamb = 25°C):
️· V(BR)CBO (Collector-Base Breakdown Voltage): 30V
️· V(BR)CEO (Collector-Emitter Breakdown Voltage): 20V
️· V(BR)EBO (Emitter-Base Breakdown Voltage): 4V
️· ICBO (Collector Cut-Off Current): 0.1 µA
️· ICEO (Collector Cut-Off Current): 0.1 µA
️· IEBO (Emitter Cut-Off Current): 0.1 µA
️· hFE (DC Current Gain): 40-120 (Typical, dependent on collector current)
️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.3V (at a specific IC/IB condition)
️· VBE(on) (Base-Emitter On Voltage): 0.9V (at a specific IC/VCE condition)
️· fT (Transition Frequency): 275 MHz (Indicates the transistor’s high-frequency performance)
4. Operating Conditions:
️· Tamb (Ambient Temperature): 25°C is used for the specified characteristics. The datasheet likely provides a range of operating temperatures.
5. Physical Dimensions:
️· Package: SOT-23 (Small outline transistor)
6. Revision Information:
️· Date: 01-Jun-2002
️· Revision: A
️· Page: 1 of 1
In Summary: This datasheet provides the necessary electrical and physical characteristics to determine if this transistor is suitable for a specific electronic circuit application. It’s a useful component for general-purpose amplification and switching.
| Part No. | BFS20_15 |
| Manufacturer | SECOS |
| Size | 104 Kbytes |
| Pages | 1 page |
| Description | Plastic-Encapsulate Transistor |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | Link para a ficha técnica | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |