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Hello, Please ask a question about KTC3876 Datasheet
# Example questions:
➢ What is the typical collector-emitter saturation voltage (vce(sat)) when the collector current (ic) is 100ma and the base current (ib) is 10ma?
➢ What is the maximum continuous collector current (ic) that the ktc3876 transistor can handle?
➢ How does the hfe range differ between the 'o', 'y', and 'g' classifications?
# KTC3876 (NPN)
## General Features
· High hFE
· Complementary to KTA1505
· SOT-23 package: 1. BASE, 2. EMITTER, 3. COLLECTOR
## Maximum Ratings (TA=25°C)
· Collector-Base Voltage (VCBO): 35V
· Collector-Emitter Voltage (VCEO): 30V
· Emitter-Base Voltage (VEBO): 5V
· Collector Current - Continuous (IC): 0.5A
· Collector Power Dissipation (PC): 0.2W
· Junction Temperature (TJ): 150°C
· Storage Temperature (Tstg): -55°C to +150°C
## Electrical Characteristics (TA=25°C)
· Collector-base breakdown voltage (VCBO): 35V (IC=100μA, IE=0)
· Collector-emitter breakdown voltage (VCEO): 30V (IC=1mA, IB=0)
· Emitter-base breakdown voltage (VEBO): 5V (IE=100μA, IC=0)
· Collector cut-off current (ICBO): 0.1μA (VCB=35V, IE=0)
· Emitter cut-off current (IEBO): 0.1μA (VEB=5V, IC=0)
· DC current gain (hFE1): 70-400 (VCE=1V, IC=100mA)
· DC current gain (hFE2): 25-40 (VCE=6V, IC=400mA)
· Collector-emitter saturation voltage (VCE(sat)): 0.25V (IC=100mA, IB=10mA)
· Base-emitter voltage (VBE): 1V (VCE=1V, IB=100mA)
· Transition frequency (fT): 300 MHz (VCE=6V, IC=20mA)
· Collector output capacitance (Cob): 7 pF (VCB=6V, IE=0, f=1MHz)
## hFE Classification
· Rank O: 70-140
· Rank Y: 120-240
· Rank G: 200-400
· Marking: WO, WY, WG
# KTC3876 (NPN)
## General Features
· High hFE
· Complementary to KTA1505
· SOT-23 package: 1. BASE, 2. EMITTER, 3. COLLECTOR
## Maximum Ratings (TA=25°C)
· Collector-Base Voltage (VCBO): 35V
· Collector-Emitter Voltage (VCEO): 30V
· Emitter-Base Voltage (VEBO): 5V
· Collector Current - Continuous (IC): 0.5A
· Collector Power Dissipation (PC): 0.2W
· Junction Temperature (TJ): 150°C
· Storage Temperature (Tstg): -55°C to +150°C
## Electrical Characteristics (TA=25°C)
· Collector-base breakdown voltage (VCBO): 35V (IC=100μA, IE=0)
· Collector-emitter breakdown voltage (VCEO): 30V (IC=1mA, IB=0)
· Emitter-base breakdown voltage (VEBO): 5V (IE=100μA, IC=0)
· Collector cut-off current (ICBO): 0.1μA (VCB=35V, IE=0)
· Emitter cut-off current (IEBO): 0.1μA (VEB=5V, IC=0)
· DC current gain (hFE1): 70-400 (VCE=1V, IC=100mA)
· DC current gain (hFE2): 25-40 (VCE=6V, IC=400mA)
· Collector-emitter saturation voltage (VCE(sat)): 0.25V (IC=100mA, IB=10mA)
· Base-emitter voltage (VBE): 1V (VCE=1V, IB=100mA)
· Transition frequency (fT): 300 MHz (VCE=6V, IC=20mA)
· Collector output capacitance (Cob): 7 pF (VCB=6V, IE=0, f=1MHz)
## hFE Classification
· Rank O: 70-140
· Rank Y: 120-240
· Rank G: 200-400
· Marking: WO, WY, WG
| Part No. | KTC3876 |
| Manufacturer | MAKOSEMI |
| Size | 228 Kbytes |
| Pages | 2 pages |
| Description | Plastic-Encapsulate Transistors |
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