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KTC3876 Datasheet with Chat AI
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  • # Example questions: ➢ What is the typical collector-emitter saturation voltage (vce(sat)) when the collector current (ic) is 100ma and the base current (ib) is 10ma?
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    ➢ How does the hfe range differ between the 'o', 'y', and 'g' classifications?

  • Part No.KTC3876
    ManufacturerMAKOSEMI
    Size228 Kbytes
    Pages2 pages
    DescriptionPlastic-Encapsulate Transistors
    Datasheet Summary with AI

    # KTC3876 (NPN)

    ## General Features
    · High hFE
    · Complementary to KTA1505
    · SOT-23 package: 1. BASE, 2. EMITTER, 3. COLLECTOR

    ## Maximum Ratings (TA=25°C)
    · Collector-Base Voltage (VCBO): 35V
    · Collector-Emitter Voltage (VCEO): 30V
    · Emitter-Base Voltage (VEBO): 5V
    · Collector Current - Continuous (IC): 0.5A
    · Collector Power Dissipation (PC): 0.2W
    · Junction Temperature (TJ): 150°C
    · Storage Temperature (Tstg): -55°C to +150°C

    ## Electrical Characteristics (TA=25°C)
    · Collector-base breakdown voltage (VCBO): 35V (IC=100μA, IE=0)
    · Collector-emitter breakdown voltage (VCEO): 30V (IC=1mA, IB=0)
    · Emitter-base breakdown voltage (VEBO): 5V (IE=100μA, IC=0)

    · Collector cut-off current (ICBO): 0.1μA (VCB=35V, IE=0)
    · Emitter cut-off current (IEBO): 0.1μA (VEB=5V, IC=0)
    · DC current gain (hFE1): 70-400 (VCE=1V, IC=100mA)
    · DC current gain (hFE2): 25-40 (VCE=6V, IC=400mA)
    · Collector-emitter saturation voltage (VCE(sat)): 0.25V (IC=100mA, IB=10mA)
    · Base-emitter voltage (VBE): 1V (VCE=1V, IB=100mA)
    · Transition frequency (fT): 300 MHz (VCE=6V, IC=20mA)
    · Collector output capacitance (Cob): 7 pF (VCB=6V, IE=0, f=1MHz)

    ## hFE Classification
    · Rank O: 70-140
    · Rank Y: 120-240
    · Rank G: 200-400
    · Marking: WO, WY, WG

    # KTC3876 (NPN)

    ## General Features
    · High hFE
    · Complementary to KTA1505
    · SOT-23 package: 1. BASE, 2. EMITTER, 3. COLLECTOR

    ## Maximum Ratings (TA=25°C)
    · Collector-Base Voltage (VCBO): 35V
    · Collector-Emitter Voltage (VCEO): 30V
    · Emitter-Base Voltage (VEBO): 5V
    · Collector Current - Continuous (IC): 0.5A
    · Collector Power Dissipation (PC): 0.2W
    · Junction Temperature (TJ): 150°C
    · Storage Temperature (Tstg): -55°C to +150°C

    ## Electrical Characteristics (TA=25°C)
    · Collector-base breakdown voltage (VCBO): 35V (IC=100μA, IE=0)
    · Collector-emitter breakdown voltage (VCEO): 30V (IC=1mA, IB=0)
    · Emitter-base breakdown voltage (VEBO): 5V (IE=100μA, IC=0)
    · Collector cut-off current (ICBO): 0.1μA (VCB=35V, IE=0)
    · Emitter cut-off current (IEBO): 0.1μA (VEB=5V, IC=0)
    · DC current gain (hFE1): 70-400 (VCE=1V, IC=100mA)
    · DC current gain (hFE2): 25-40 (VCE=6V, IC=400mA)
    · Collector-emitter saturation voltage (VCE(sat)): 0.25V (IC=100mA, IB=10mA)
    · Base-emitter voltage (VBE): 1V (VCE=1V, IB=100mA)
    · Transition frequency (fT): 300 MHz (VCE=6V, IC=20mA)
    · Collector output capacitance (Cob): 7 pF (VCB=6V, IE=0, f=1MHz)

    ## hFE Classification
    · Rank O: 70-140
    · Rank Y: 120-240
    · Rank G: 200-400
    · Marking: WO, WY, WG

    Part No.KTC3876
    ManufacturerMAKOSEMI
    Size228 Kbytes
    Pages2 pages
    DescriptionPlastic-Encapsulate Transistors
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