# PXT8050

## General Description
️· Plastic-encapsulate NPN transistor.
️· Complimentary to PXT8550.
️· Marking: Y1

## Features
️· Collector Current (IC): 1.5A
️· Collector Power Dissipation (PC): 1000mW

## Maximum Ratings (TA=25°C unless otherwise noted)
️· Collector-Base Voltage (VCBO): 40V
️· Collector-Emitter Voltage (VCEO): 25V
️· Emitter-Base Voltage (VEBO): 5V
️· Continuous Collector Current (IC): 1500mA
️· Junction Temperature (TJ): 150°C
️· Storage Temperature (Tstg): -55°C to 150°C

## Electrical Characteristics (Tamb=25°C unless otherwise specified)
️· Breakdown Voltages:
- VCBO: 40V (IC = 100μA, IE=0)
- VCEO: 25V (IC = 0.1mA, IB=0)
- VEBO: 5V (IE= 100μA, IC=0)
️· Cut-off Currents:
- ICBO: 0.1μA (VCB= 40V, IE=0)
- ICEO: 0.1μA (VCE= 20V, IB=0)
- IEBO: 0.1μA (VEB= 5V, IC=0)
️· DC Current Gain (hFE):
- hFE(1): 85-400 (VCE = 1V, IC = 100mA)
- hFE(2): 50 (VCE = 1V, IC = 800mA)
️· Saturation Voltages:
- VCE(sat): 0.5V (IC = 800mA, IB = 80mA)
- VBE(sat): 1.2V (IC = 800mA, IB = 80mA)
️· Base-Emitter Voltage:
- VBE: 1V (VCE=1V, IC=10mA)
- VBEF: 1.5V (IB=1A)
️· Frequency:
- fT: 100 MHz (VCE=10V, IC=50mA, f=30MHz)
️· Capacitance:
- Cob: 15pF (VCB=10V, IE=0, f=1MHz)

## HFE Classification
️· Rank B: 85-160
️· Rank C: 120-200
️· Rank D: 160-300
️· Rank D1: 300-400

## Package
️· SOT-89