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  • # Example questions: ➢ What is the maximum power dissipation, in milliwatts, for each device within the sft390604a2 package when operating at a case temperature of 25ºc?
    ➢ What are the available screening levels, as indicated in the datasheet, for the sft390604a2 series?
    ➢ How does the collector-base breakdown voltage (vcb) differ between the pnp and npn devices, as specified in the electrical characteristics table?

  • Part No.TR0036
    ManufacturerSSDI
    Size163 Kbytes
    Pages2 pages
    DescriptionNPN/PNP Transistor
    Datasheet Summary with AI

    # SFT390604A2 Series Dual Microminiature NPN/PNP Transistor

    ## Features
    · High speed switching
    · Multiple devices reduce board space
    · High power dissipation: up to 600mW/device
    · TX, TXV, S-Level screening available
    · Replaces 2N3906AU (PNP) & 2N3904AU (NPN) in one package

    ## Maximum Ratings (per device)
    · Collector – Emitter Voltage (VCEO): 40V
    · Collector – Base Voltage (VCBO): 40V (PNP), 60V (NPN)
    · Emitter – Base Voltage (VEBO): 6V
    · Continuous Collector Current (IC): 200mA
    · Power Dissipation (PD @ TC = 25ºC): 600mW
    · Operating & Storage Temperature (Top & Tstg): -65 to +200ºC
    · Maximum Thermal Resistance (RθJC): 0.29 ºC/mW

    ## Electrical Characteristics
    · Collector – Emitter Sustaining Voltage (BVCEO): 40V (min)

    · Collector – Base Breakdown Voltage (BVCBO): 40V (PNP), 60V (NPN)
    · Collector Cutoff Current (ICEX, ICBO, IEBO): 50nA (max)
    · DC Forward Current Transfer Ratio (HFE): 60-300 (PNP), 40-300 (NPN)
    · Collector – Emitter Saturation Voltage (VCE(Sat)): 0.25-0.40V (PNP), 0.20-0.30V (NPN)
    · Frequency Transition (fT): 250MHz (PNP), 300MHz (NPN)

    ## Package Information
    · Available Part Number: SFT390604A2GW
    · Pinout:
    - Pin 1: Collector
    - Pin 2: Base
    - Pin 3: Emitter (for both PNP & NPN)

    # SFT390604A2 Series Dual Microminiature NPN/PNP Transistor

    ## Features
    · High speed switching
    · Multiple devices reduce board space
    · High power dissipation: up to 600mW/device
    · TX, TXV, S-Level screening available
    · Replaces 2N3906AU (PNP) & 2N3904AU (NPN) in one package

    ## Maximum Ratings (per device)
    · Collector – Emitter Voltage (VCEO): 40V
    · Collector – Base Voltage (VCBO): 40V (PNP), 60V (NPN)
    · Emitter – Base Voltage (VEBO): 6V
    · Continuous Collector Current (IC): 200mA
    · Power Dissipation (PD @ TC = 25ºC): 600mW
    · Operating & Storage Temperature (Top & Tstg): -65 to +200ºC
    · Maximum Thermal Resistance (RθJC): 0.29 ºC/mW

    ## Electrical Characteristics
    · Collector – Emitter Sustaining Voltage (BVCEO): 40V (min)
    · Collector – Base Breakdown Voltage (BVCBO): 40V (PNP), 60V (NPN)
    · Collector Cutoff Current (ICEX, ICBO, IEBO): 50nA (max)
    · DC Forward Current Transfer Ratio (HFE): 60-300 (PNP), 40-300 (NPN)
    · Collector – Emitter Saturation Voltage (VCE(Sat)): 0.25-0.40V (PNP), 0.20-0.30V (NPN)
    · Frequency Transition (fT): 250MHz (PNP), 300MHz (NPN)

    ## Package Information
    · Available Part Number: SFT390604A2GW
    · Pinout:
    - Pin 1: Collector
    - Pin 2: Base
    - Pin 3: Emitter (for both PNP & NPN)

    Part No.TR0036
    ManufacturerSSDI
    Size163 Kbytes
    Pages2 pages
    DescriptionNPN/PNP Transistor
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