| Os motores de busca de Datasheet de Componentes eletrônicos |
|
The question interval is too short.
Please try again in a few seconds.
Hello, Please ask a question about UT23P09 Datasheet
# Example questions:
➢ What is the maximum continuous source current (is) that the body diode of the ut23p09 can handle?
➢ What is the typical rds(on) value for the ut23p09 at a vgs of -10v and an id of -11a?
➢ What are the test conditions used to determine the qg (total gate charge) of the ut23p09?
# UT23P09 P-Channel Power MOSFET
## Features
· RDS(ON) < 0.117Ω @ VGS = -10V, ID = -11A
· High Switching Speed
· Dynamic dv/dt Rating
## Absolute Maximum Ratings
· Drain-Source Voltage (VDSS): -100V
· Gate-Source Voltage (VGSS): ±20V
· Drain Current (ID): -23A (TC=25°C), -16A (TC=100°C), -76A (pulsed)
· Power Dissipation (PD): 140W @ 25°C, 0.91W/°C derating
· Junction Temperature (TJ): -55 to +150°C
· Storage Temperature (TSTG): -55 to +150°C
## Thermal Resistance
· Junction to Ambient (θJA): 62 °C/W
· Junction to Case (θJC): 1.1 °C/W
## Electrical Characteristics (TJ=25°C)
· Breakdown Voltage (BVDSS): -100V
· Drain-Source Leakage Current (IDSS): -25µA to -250µA
· Gate Threshold Voltage (VGS(TH)): -2.0 to -4.0V
· Static Drain-Source On-Resistance (RDS(ON)): 0.117Ω @ VGS=-10V, ID=-11A
· Input Capacitance (CISS): 1300pF
· Total Gate Charge (QG): 97nC
· Turn-On Delay Time (tD(ON)): 15ns
## Source-Drain Diode Ratings
· Continuous Source Current (IS): -23A
· Pulsed Source Current (ISM): -76A
· Forward Voltage (VSD): -1.6V @ IS=-11A
· Reverse Recovery Time (tRR): 150-220ns
· Reverse Recovery Charge (QRR): 830-1200nC
## Ordering Information
· UT23P09L-TA3-T / UT23P09G-TA3-T (TO-220 package) - Tube pack
· Pin Assignment: G=Gate, D=Drain, S=Source
# UT23P09 P-Channel Power MOSFET
## Features
· RDS(ON) < 0.117Ω @ VGS = -10V, ID = -11A
· High Switching Speed
· Dynamic dv/dt Rating
## Absolute Maximum Ratings
· Drain-Source Voltage (VDSS): -100V
· Gate-Source Voltage (VGSS): ±20V
· Drain Current (ID): -23A (TC=25°C), -16A (TC=100°C), -76A (pulsed)
· Power Dissipation (PD): 140W @ 25°C, 0.91W/°C derating
· Junction Temperature (TJ): -55 to +150°C
· Storage Temperature (TSTG): -55 to +150°C
## Thermal Resistance
· Junction to Ambient (θJA): 62 °C/W
· Junction to Case (θJC): 1.1 °C/W
## Electrical Characteristics (TJ=25°C)
· Breakdown Voltage (BVDSS): -100V
· Drain-Source Leakage Current (IDSS): -25µA to -250µA
· Gate Threshold Voltage (VGS(TH)): -2.0 to -4.0V
· Static Drain-Source On-Resistance (RDS(ON)): 0.117Ω @ VGS=-10V, ID=-11A
· Input Capacitance (CISS): 1300pF
· Total Gate Charge (QG): 97nC
· Turn-On Delay Time (tD(ON)): 15ns
## Source-Drain Diode Ratings
· Continuous Source Current (IS): -23A
· Pulsed Source Current (ISM): -76A
· Forward Voltage (VSD): -1.6V @ IS=-11A
· Reverse Recovery Time (tRR): 150-220ns
· Reverse Recovery Charge (QRR): 830-1200nC
## Ordering Information
· UT23P09L-TA3-T / UT23P09G-TA3-T (TO-220 package) - Tube pack
· Pin Assignment: G=Gate, D=Drain, S=Source
| Part No. | UT23P09 |
| Manufacturer | UTC |
| Size | 171 Kbytes |
| Pages | 6 pages |
| Description | -23A, -100V P-CHANNEL POWER MOSFET |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | Link para a ficha técnica | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |