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UT23P09 Datasheet with Chat AI
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    Hello, Please ask a question about UT23P09 Datasheet

  • # Example questions: ➢ What is the maximum continuous source current (is) that the body diode of the ut23p09 can handle?
    ➢ What is the typical rds(on) value for the ut23p09 at a vgs of -10v and an id of -11a?
    ➢ What are the test conditions used to determine the qg (total gate charge) of the ut23p09?

  • Part No.UT23P09
    ManufacturerUTC
    Size171 Kbytes
    Pages6 pages
    Description-23A, -100V P-CHANNEL POWER MOSFET
    Datasheet Summary with AI

    # UT23P09 P-Channel Power MOSFET

    ## Features
    · RDS(ON) < 0.117Ω @ VGS = -10V, ID = -11A
    · High Switching Speed
    · Dynamic dv/dt Rating

    ## Absolute Maximum Ratings
    · Drain-Source Voltage (VDSS): -100V
    · Gate-Source Voltage (VGSS): ±20V
    · Drain Current (ID): -23A (TC=25°C), -16A (TC=100°C), -76A (pulsed)
    · Power Dissipation (PD): 140W @ 25°C, 0.91W/°C derating
    · Junction Temperature (TJ): -55 to +150°C
    · Storage Temperature (TSTG): -55 to +150°C

    ## Thermal Resistance
    · Junction to Ambient (θJA): 62 °C/W
    · Junction to Case (θJC): 1.1 °C/W

    ## Electrical Characteristics (TJ=25°C)

    · Breakdown Voltage (BVDSS): -100V
    · Drain-Source Leakage Current (IDSS): -25µA to -250µA
    · Gate Threshold Voltage (VGS(TH)): -2.0 to -4.0V
    · Static Drain-Source On-Resistance (RDS(ON)): 0.117Ω @ VGS=-10V, ID=-11A
    · Input Capacitance (CISS): 1300pF
    · Total Gate Charge (QG): 97nC
    · Turn-On Delay Time (tD(ON)): 15ns

    ## Source-Drain Diode Ratings
    · Continuous Source Current (IS): -23A
    · Pulsed Source Current (ISM): -76A
    · Forward Voltage (VSD): -1.6V @ IS=-11A
    · Reverse Recovery Time (tRR): 150-220ns
    · Reverse Recovery Charge (QRR): 830-1200nC

    ## Ordering Information
    · UT23P09L-TA3-T / UT23P09G-TA3-T (TO-220 package) - Tube pack
    · Pin Assignment: G=Gate, D=Drain, S=Source

    # UT23P09 P-Channel Power MOSFET

    ## Features
    · RDS(ON) < 0.117Ω @ VGS = -10V, ID = -11A
    · High Switching Speed
    · Dynamic dv/dt Rating

    ## Absolute Maximum Ratings
    · Drain-Source Voltage (VDSS): -100V
    · Gate-Source Voltage (VGSS): ±20V
    · Drain Current (ID): -23A (TC=25°C), -16A (TC=100°C), -76A (pulsed)
    · Power Dissipation (PD): 140W @ 25°C, 0.91W/°C derating
    · Junction Temperature (TJ): -55 to +150°C
    · Storage Temperature (TSTG): -55 to +150°C

    ## Thermal Resistance
    · Junction to Ambient (θJA): 62 °C/W
    · Junction to Case (θJC): 1.1 °C/W

    ## Electrical Characteristics (TJ=25°C)
    · Breakdown Voltage (BVDSS): -100V
    · Drain-Source Leakage Current (IDSS): -25µA to -250µA
    · Gate Threshold Voltage (VGS(TH)): -2.0 to -4.0V
    · Static Drain-Source On-Resistance (RDS(ON)): 0.117Ω @ VGS=-10V, ID=-11A
    · Input Capacitance (CISS): 1300pF
    · Total Gate Charge (QG): 97nC
    · Turn-On Delay Time (tD(ON)): 15ns

    ## Source-Drain Diode Ratings
    · Continuous Source Current (IS): -23A
    · Pulsed Source Current (ISM): -76A
    · Forward Voltage (VSD): -1.6V @ IS=-11A
    · Reverse Recovery Time (tRR): 150-220ns
    · Reverse Recovery Charge (QRR): 830-1200nC

    ## Ordering Information
    · UT23P09L-TA3-T / UT23P09G-TA3-T (TO-220 package) - Tube pack
    · Pin Assignment: G=Gate, D=Drain, S=Source

    Part No.UT23P09
    ManufacturerUTC
    Size171 Kbytes
    Pages6 pages
    Description-23A, -100V P-CHANNEL POWER MOSFET
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