# RN2112ACT, RN2113ACT Transistor Datasheet Summary

## Overview
Silicon PNP Epitaxial Type transistor with built-in bias resistor. Suitable for switching, inverter, interface and driver applications. Available in a CST3 (extra small) package for high-density fabrication. Complementary to RN1112CT, RN1113CT.

## Absolute Maximum Ratings (Ta = 25°C)

️· Collector-base voltage (VCBO): -50 V
️· Collector-emitter voltage (VCEO): -50 V
️· Emitter-base voltage (VEBO): -5 V
️· Collector current (IC): -80 mA
️· Collector power dissipation (PC): 100 mW (mounted on FR4 board)
️· Junction temperature (Tj): 150 °C
️· Storage temperature range (Tstg): -55 to 150 °C

## Electrical Characteristics (Ta = 25°C)

️· Collector cut-off current (ICBO): -100 nA (max)
️· Emitter cut-off current (IEBO): -100 nA (max)
️· DC current gain (hFE): 120-400 (VCE = -5V, IC = -1mA)
️· Collector-emitter saturation voltage (VCE(sat)): -0.15 V (IC = -5mA, IB = -0.25mA)
️· Collector output capacitance (Cob): 0.9 pF (VCB = -10V, IE = 0, f = 1 MHz)
️· Input resistor (R1):
- RN2112ACT: 17.6 – 26.4 kΩ
- RN2113ACT: 37.6 – 56.4 kΩ

## Package & Marking

️· Package: CST3
️· Marking:
- RN2112ACT: DH, 1, 3, 2
- RN2113ACT: DJ, 1, 3, 2

## Restrictions & Important Notes

️· Toshiba reserves the right to change product specifications.
️· The product is intended for general electronic applications; not for use in critical applications like life support systems or aerospace.
️· Users are responsible for ensuring safe operation and compliance with relevant safety standards.
️· The manufacturer is not liable for damages or losses resulting from misuse or non-compliance with regulations.
️· Export regulations apply.
️· RoHS compliance information is available from the sales representative.