# 2SC4177 NPN Transistor

## Features

️· High DC Current Gain
️· Complementary to 2SA1611
️· High Voltage
️· General Purpose Amplification

## Maximum Ratings (Ta=25℃)

Parameter	Value	Unit
VCBO (Collector-Base Voltage)	60	V
VCEO (Collector-Emitter Voltage)	50	V
VEBO (Emitter-Base Voltage)	60	V
IC (Collector Current)	100	mA
PC (Collector Power Dissipation)	150	mW
RΘJA (Thermal Resistance)	833	℃/W
Tj (Junction Temperature)	150	℃
Tstg (Storage Temperature)	-55～+150	℃

## Electrical Characteristics (Ta=25℃)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
V(BR)CBO (Collector-base breakdown voltage)		IC=100µA, IE=0	60			V
V(BR)CEO (Collector-emitter breakdown voltage)		IC=1mA, IB=0	50			V
V(BR)EBO (Emitter-base breakdown voltage)		IE=100µA, IC=0	5			V
ICBO (Collector cut-off current)		VCB=60V, IE=0			100	nA
IEBO (Emitter cut-off current)		VEB=5V, IC=0			100	nA
hFE (DC current gain)		VCE=6V, IC=1mA	90		600
VCE(sat) (Collector-emitter saturation voltage)		IC=100mA, IB=10mA			0.3	V
VBE(sat) (Base-emitter saturation voltage)		IC=100mA, IB=10mA			1	V
VBE (Base-emitter voltage)		VCE=6V, IC=1mA	0.55		0.65	V
fT (Transition frequency)		VCE=6V, IC=10mA		250		MHz
Cob (Collector output capacitance)		VCB=6V, IE=0, f=1MHz		3		pF

*Pulse test conditions: pulse width ≤350μs, duty cycle ≤ 2.0%.

## hFE Classification

Rank	L4	L5	L6	L7
Range	90–180	135–270	200–400	300–600
Marking	L4	L5	L6	L7

## Package

SOT-323:
1. Base
2. Emitter
3. Collector