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Part No.	2N5294
Manufacturer	ISC
Size	134 Kbytes
Pages	3 pages
Description	Silicon NPN Power Transistors

Datasheet Summary with AI

# Silicon NPN Power Transistors 2N5294 2N5296 2N5298

## Description

· TO-220 package
· High power dissipation

## Applications

· Power amplifier
· Medium speed switching applications

## Pinning

PIN DESCRIPTION

1 Base

2 Collector;connected to mounting base

3 Emitter

## Absolute Maximum Ratings (Ta=25°C)

SYMBOL PARAMETER 2N5294 2N5296 2N5298 UNIT

VCBO Collector-base voltage 80 60 80 V

VCEO Collector-emitter voltage 70 40 60 V

VEBO Emitter cut-off voltage V

IC Collector current A

Pb Power dissipation W

Tj Junction temperature °C

Tst Storage Junction temperature °C

## Thermal Characteristics

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal resistance from junction to case 3.47 °C/W

## Electrical Characteristics

SYMBOL PARAMETER 2N5294 2N5296 2N5298 UNIT

VCE(sat) Collector-emitter saturation voltage ≤1.0 ≤ ≤ V

VBE(on) Base-emitter on voltage ≤1.1 ≤ ≤ V

IC Collector current A

hFE DC current gain 30-120

fT Transition frequency MHz

## Package Outline

· Refer to Fig. 2 (unspecified dimensions, tolerance ±0.10 mm)

SYMBOL	PARAMETER	2N5294	2N5296	2N5298	UNIT
VCBO	Collector-base voltage	80	60	80	V
VCEO	Collector-emitter voltage	70	40	60	V
VEBO	Emitter cut-off voltage				V
IC	Collector current				A
Pb	Power dissipation				W
Tj	Junction temperature				°C
Tst	Storage Junction temperature				°C

SYMBOL	PARAMETER	2N5294	2N5296	2N5298	UNIT
VCE(sat)	Collector-emitter saturation voltage	≤1.0	≤	≤	V
VBE(on)	Base-emitter on voltage	≤1.1	≤	≤	V
IC	Collector current				A
hFE	DC current gain	30-120
fT	Transition frequency				MHz