# SUMMARY: Datasheet Analysis of a Transistor (likely NPN)


## 1. Device Overview

️· Type: NPN Transistor (likely, based on typical parameters)
️· Package: SOT-23 (Surface Mount)
️· Marking: G11
️· Special Feature: A suffix "-C" indicates a halogen-free version.

## 2. Key Electrical Characteristics (Tamb = 25°C)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	Ic=100µA, IE=0	30			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	Ic=100µA, IB=0	20			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=100µA, IC=0	4			V
Collector Cut-off Current	ICBO	VCB=20V, IE=0			0.1	µA
Collector Cut-off Current	ICEO	VCE=15V, IB=0			0.1	µA
Emitter Cut-off Current	IEBO	VEB=4V, IC=0			0.1	µA
DC Current Gain	hFE	VCE=10V, IC=7mA	40		120
Collector-Emitter Saturation Voltage	VCE(sat)	IC=10mA, IB=1mA			0.3	V
Base-Emitter Voltage	VBE(on)	IC=7mA, VCE=10V			0.9	V
Transition Frequency	fT	VCE=10V, IC=5mA, f=100MHz	275			MHz

## 3. Operating Conditions/Limits

️· Operating and Storage Junction Temperature (Tj, Tstg): -55°C to +150°C

## 4. Other Important Information

️· Datasheet Date: 2002-06-01 (Revision A, Page 1 of 1)
️· Manufacturer/Source: SeCoS GmbH (based on the website provided)

In essence, this datasheet describes a small-signal NPN transistor suitable for general-purpose amplification and switching applications. It's designed for surface mounting and offers a relatively moderate current gain (hFE). The fact that the datasheet is from 2002 suggests this is an older component, but it might still be available from distributors.