# 2SC2655 NPN SILICON TRANSISTOR

## FEATURES
· Low saturation voltage: VCE(SAT) = 0.5V (Max.)
· High speed switching time: tstg = 1.0μs (Typ.)
· Available in Lead-free (2SC2655L) and Halogen-free (2SC2655G) options

## ORDERING INFORMATION
· Package Options: SOT-23, TO-92NL
· Packing Options: Tape Reel, Tape Box, Bulk
· Example Ordering Numbers:
- 2SC2655-x-AE3-R (SOT-23, Tape Reel)
- 2SC2655-x-T9N-B (TO-92NL, Tape Box)
- 2SC2655-x-T9N-K (TO-92NL, Bulk)

## ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
· Collector-Base Voltage (VCBO): 50V
· Collector-Emitter Voltage (VCEO): 50V
· Emitter-Base Voltage (VEBO): 5V
· Collector Current (Ic): 2A
· Collector Pulse Current (Icp): 3A
· Base Current (IB): 0.5A
· Collector Power Dissipation (Pc): 350mW (SOT-23), 900mW (TO-92NL)
· Junction Temperature (TJ): 150°C
· Storage Temperature (TSTG): -55 ~ +150°C

## ELECTRICAL CHARACTERISTICS (Ta=25°C)
· Collector Emitter Breakdown Voltage (BVCEO): 50V (Ic=10mA, IB=0)
· Collector Cut-off Current (ICBO): 1.0 μA (VCB=50V, IE=0)
· Emitter Cut-off Current (IEBO): 1.0 μA (VEB=5V, IC=0)
· DC Current Gain (hFE(1)): 70-240 (VCE=2V, Ic=0.5A)
· DC Current Gain (hFE(2)): 40-240 (VCE=2V, Ic=1.5A)
· Collector-Emitter Saturation Voltage (VCE(SAT)): 0.5V (IC=1A, IB=0.05A)
· Base-Emitter Saturation Voltage (VBE(SAT)): 1.2V (IC=1A, IB=0.05A)
· Transition Frequency (fT): 100 MHz (VCE=2V, IC=0.5A)
· Collector Output Capacitance (Cob): 30 pF (VCB=10V, IE=0, f=1MHz)
· Switching Time (tON): 0.1 μs

## hFE CLASSIFICATION
· Rank O: 70-140
· Rank Y: 120-240