# MJE5180/5181/5182 Silicon NPN Power Transistors

## General Description

· Complementary to MJE5170/5171/5172
· Applications: General purpose amplifier and switching applications.
· Available models: MJE5180, MJE5181, MJE5182
· Collector-Emitter Sustaining Voltage varies: 120V (MJE5180), 140V (MJE5181), 160V (MJE5182)

## Absolute Maximum Ratings (Ta=25°C)

· VCBO (Collector-Base Voltage): 120V (MJE5180), 140V (MJE5181), 160V (MJE5182)
· VCEO (Collector-Emitter Voltage): 120V (MJE5180), 140V (MJE5181), 160V (MJE5182)
· VEBO (Emitter-Base Voltage): 5V
· IC (Collector Current - Continuous): 6A
· ICM (Collector Current - Peak): 10A
· IB (Base Current - Continuous): 2A
· PC (Collector Power Dissipation @ TC=25°C): 65W
· PC (Collector Power Dissipation @ Ta=25°C): 2W
· TJ (Junction Temperature): 150°C
· Tstg (Storage Temperature Range): -65~150°C

## Thermal Characteristics

· Rth j-c (Thermal Resistance, Junction to Case): 1.92 °C/W
· Rth j-a (Thermal Resistance, Junction to Ambient): 62.5 °C/W

## Electrical Characteristics (TC=25°C unless otherwise specified)

· VCE(sat) (Collector-Emitter Saturation Voltage): 1.5V (IC=6A, IB=0.6A)
· VBE(on) (Base-Emitter On Voltage): 2.0V (IC=6A, VCE=4V)
· ICEO (Collector Cutoff Current): 0.7mA (VCE=60V, IB=0) (MJE5180), 0.7mA (MJE5181), 0.7mA (MJE5182)
· ICES (Collector Cutoff Current): 0.4mA (VCE=120V, VEB=0) (MJE5180), 0.4mA (MJE5181), 0.4mA (MJE5182)
· IEBO (Emitter Cutoff Current): 1.0mA (VEB=5V, IC=0)
· hFE-1 (DC Current Gain): 30-100 (IC=0.3A, VCE=4V)
· fT (Current-Gain—Bandwidth Product): 1.0MHz (IC=0.5A, VCE=10V, ftest=1.0MHz)

## Website

· www.iscsemi.cn