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2SC3624 Datasheet with Chat AI
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  • # Example questions: ➢ How does the hfe classification marking (l17 or l18) relate to the range of dc current gain (hfe) that can be expected from this transistor?
    ➢ What is the maximum allowable collector current (ic) under the specified operating conditions?
    ➢ What is the typical collector-emitter saturation voltage (vce(sat)) when the collector current is 50ma and the base current is 5ma?

  • Part No.2SC3624
    ManufacturerKEXIN
    Size37 Kbytes
    Pages1 page
    DescriptionNPN Silicon Epitaxial Transistor
    Datasheet Summary with AI

    # 2SC3624 NPN Silicon Epitaxial Transistor

    ## Features

    · High DC current Gain: hFE = 1000 to 3200
    · Low VCE(sat): 0.07V (typical)

    ## Absolute Maximum Ratings (Ta = 25°C)

    · Vcbo: 60V
    · Vceo: 50V
    · Vebo: 12V
    · Ic: 150mA
    · PT: 200mW
    · Tj: 150°C
    · Tstg: -55°C to +150°C

    ## Electrical Characteristics (Ta = 25°C)

    · Icbo: 100nA (VCB = 50V, IE=0)
    · Iebo: 100nA (VEB = 10V, IC=0)
    · hFE: 1000 - 3200 (VCE = 5V, IC = 1mA)
    · Vbe: 0.56V (VCE = 5V, IC = 1mA)
    · Vce(sat): 0.07 - 0.3V (Ic = 50mA, Ib = 5mA)
    · Vbe(sat): 0.8 - 1.2V (Ic = 50mA, Ib = 5mA)
    · fT: 250 MHz (VCE = 5V, IE = -10mA)
    · Cob: 3pF (VCB = 5V, IE = 0, f = 1.0 MHz)
    · ton: 0.13ns (VCC = 10V, VBE(off) = -2.7V)
    · tstg: 0.72ns (Ic = 50mA)
    · toff: 1.22ns (IB1 = -IB2 = 1mA)

    ## hFE Classification

    Marking hFE
    L17 1000 - 2000
    L18 1600 - 3200

    ## Dimensions

    · SMD SOT-23 Package
    · Dimensions: 0.1 + 0.05 - 0.01, 2.9 + 0.1 - 0.1, 0.95 + 0.1 - 0.1, 1.9 + 0.1 - 0.1, 2.4 + 0.1 - 0.1, 1.3 + 0.1 - 0.1 (in mm)

    # 2SC3624 NPN Silicon Epitaxial Transistor

    ## Features

    · High DC current Gain: hFE = 1000 to 3200
    · Low VCE(sat): 0.07V (typical)

    ## Absolute Maximum Ratings (Ta = 25°C)

    · Vcbo: 60V
    · Vceo: 50V
    · Vebo: 12V
    · Ic: 150mA
    · PT: 200mW
    · Tj: 150°C
    · Tstg: -55°C to +150°C

    ## Electrical Characteristics (Ta = 25°C)

    · Icbo: 100nA (VCB = 50V, IE=0)
    · Iebo: 100nA (VEB = 10V, IC=0)
    · hFE: 1000 - 3200 (VCE = 5V, IC = 1mA)
    · Vbe: 0.56V (VCE = 5V, IC = 1mA)
    · Vce(sat): 0.07 - 0.3V (Ic = 50mA, Ib = 5mA)
    · Vbe(sat): 0.8 - 1.2V (Ic = 50mA, Ib = 5mA)
    · fT: 250 MHz (VCE = 5V, IE = -10mA)
    · Cob: 3pF (VCB = 5V, IE = 0, f = 1.0 MHz)
    · ton: 0.13ns (VCC = 10V, VBE(off) = -2.7V)
    · tstg: 0.72ns (Ic = 50mA)
    · toff: 1.22ns (IB1 = -IB2 = 1mA)

    ## hFE Classification

    Marking hFE
    L17 1000 - 2000
    L18 1600 - 3200

    ## Dimensions

    · SMD SOT-23 Package
    · Dimensions: 0.1 + 0.05 - 0.01, 2.9 + 0.1 - 0.1, 0.95 + 0.1 - 0.1, 1.9 + 0.1 - 0.1, 2.4 + 0.1 - 0.1, 1.3 + 0.1 - 0.1 (in mm)

    Part No.2SC3624
    ManufacturerKEXIN
    Size37 Kbytes
    Pages1 page
    DescriptionNPN Silicon Epitaxial Transistor
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