# 1SS403 Silicon Diode

## Key Features
· High Voltage Switching Applications
· Small Package: Suitable for high mounting densities
· Forward Voltage: VF(2) = 0.90V (typ.)
· Fast Recovery Time: trr = 60ns (typ.)
· Low Capacitance: CT = 1.5pF (typ.)

## Absolute Maximum Ratings (Ta = 25°C)

Characteristic	Symbol	Rating	Unit
Maximum Peak Reverse Voltage	VRM	250	V
Reverse Voltage	VR	200	V
Maximum Peak Forward Current	IFM	300	mA
Average Forward Current	IO	100	mA
Surge Current (10ms)	IFSM	2	A
Power Dissipation	P	200\*	mW
Junction Temperature	Tj	125	°C
Storage Temperature	Tstg	-55~125	°C

\*When mounted on a 20mm x 20mm glass epoxy PCB with a 4mm x 4mm copper pad.

## Electrical Characteristics (Ta = 25°C)

Characteristic	Symbol	Test Condition	Min	Typ	Max	Unit
Forward Voltage	VF(1)	IF = 10mA	-	0.72	1.0	V
Forward Voltage	VF(2)	IF = 100mA	-	0.90	1.2	V
Reverse Current	IR(1)	VR = 50V	-	-	0.1	μA
Reverse Current	IR(2)	VR = 200V	-	-	1.0	μA
Total Capacitance	CT	VR = 0, f = 1MHz	-	1.5	3.0	pF
Reverse Recovery Time	trr	IF = 10mA	-	10	60	ns

## Important Notes
· Reliability may decrease with heavy loads or extreme conditions. Refer to Toshiba’s Semiconductor Reliability Handbook for details.
· These diodes are intended for general electronic applications. Not intended for use in life-critical or safety-related applications.
· Compliance with RoHS and applicable laws/regulations is required.
· Information is subject to change.