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Hello, Please ask a question about P4C1024L70SC Datasheet
# Example questions:
➢ What is the data retention current (iccdr) at vdr = 0v, according to the datasheet?
➢ What is the maximum operating recovery time (tr) specified in the datasheet?
➢ What are the package options available for the industrial temperature range?
1. Overview
️· Type: Low-power CMOS static RAM.
️· Organization: 128K x 8 bits.
️· Features: High speed, low power consumption, single 5V power supply, easy interface, automatic power-down, data retention capability.
️· Applications: General purpose memory, buffers, peripheral storage, etc.
2. Electrical Characteristics
️· Supply Voltage (VCC): 5V ±5%
️· Operating Temperature: Commercial (0°C to +70°C), Industrial (-40°C to +85°C).
️· Access Time: Varies depending on speed grade (55ns, 70ns are mentioned).
️· Operating Current: Low power consumption (typical values given).
️· Standby Current: Very low standby current.
️· Data Retention Voltage (VDR): Can retain data at voltages as low as 2.0V.
3. Functional Description
️· Inputs: Address (A0-A15), Data In/Out (DI/O), Chip Enable (CE), Output Enable (OE), Write Enable (WE).
️· Outputs: Data Out.
️· Operations: Read, Write, Standby.
️· Write Protection: The datasheet specifies how to prevent unwanted writes.
️· Power-Down: The RAM automatically enters a low-power standby mode when not selected.
4. Timing Characteristics
️· Access Time (tACC): Time from address and control signal valid to data out valid.
️· Chip Select Access Time (tCS): Time from CE valid to output valid.
️· Write Cycle Time (tWC): Minimum time required for a write cycle.
️· Setup and Hold Times: Required setup and hold times for address, data, and control signals.
️· Recovery Time: Time required after a write cycle before a read can be performed.
5. Package Options
️· Plastic DIP (600 mil)
️· Plastic SOP (445 mil)
️· TSOP (Thin Small Outline Package)
️· Ceramic DIP (600 mil)
6. Ordering Information
️· The datasheet provides part number codes to select the desired temperature range, speed, and package type. For example, `-55PC` would be a commercial temperature grade, 55ns access time, plastic DIP package.
7. Data Retention Capabilities
️· The RAM can retain data even with a reduced supply voltage (down to 2.0V).
️· Specific current consumption numbers are given for data retention.
8. Revision History
️· The datasheet includes a revision history table outlining the changes made in each revision.
In Essence: The P4C1024L is a versatile, low-power static RAM suitable for various embedded systems and memory applications where power consumption and data retention are critical. It offers a balance of speed, size, and cost-effectiveness.
1. Overview
️· Type: Low-power CMOS static RAM.
️· Organization: 128K x 8 bits.
️· Features: High speed, low power consumption, single 5V power supply, easy interface, automatic power-down, data retention capability.
️· Applications: General purpose memory, buffers, peripheral storage, etc.
2. Electrical Characteristics
️· Supply Voltage (VCC): 5V ±5%
️· Operating Temperature: Commercial (0°C to +70°C), Industrial (-40°C to +85°C).
️· Access Time: Varies depending on speed grade (55ns, 70ns are mentioned).
️· Operating Current: Low power consumption (typical values given).
️· Standby Current: Very low standby current.
️· Data Retention Voltage (VDR): Can retain data at voltages as low as 2.0V.
3. Functional Description
️· Inputs: Address (A0-A15), Data In/Out (DI/O), Chip Enable (CE), Output Enable (OE), Write Enable (WE).
️· Outputs: Data Out.
️· Operations: Read, Write, Standby.
️· Write Protection: The datasheet specifies how to prevent unwanted writes.
️· Power-Down: The RAM automatically enters a low-power standby mode when not selected.
4. Timing Characteristics
️· Access Time (tACC): Time from address and control signal valid to data out valid.
️· Chip Select Access Time (tCS): Time from CE valid to output valid.
️· Write Cycle Time (tWC): Minimum time required for a write cycle.
️· Setup and Hold Times: Required setup and hold times for address, data, and control signals.
️· Recovery Time: Time required after a write cycle before a read can be performed.
5. Package Options
️· Plastic DIP (600 mil)
️· Plastic SOP (445 mil)
️· TSOP (Thin Small Outline Package)
️· Ceramic DIP (600 mil)
6. Ordering Information
️· The datasheet provides part number codes to select the desired temperature range, speed, and package type. For example, `-55PC` would be a commercial temperature grade, 55ns access time, plastic DIP package.
7. Data Retention Capabilities
️· The RAM can retain data even with a reduced supply voltage (down to 2.0V).
️· Specific current consumption numbers are given for data retention.
8. Revision History
️· The datasheet includes a revision history table outlining the changes made in each revision.
In Essence: The P4C1024L is a versatile, low-power static RAM suitable for various embedded systems and memory applications where power consumption and data retention are critical. It offers a balance of speed, size, and cost-effectiveness.
| Part No. | P4C1024L70SC |
| Manufacturer | PYRAMID |
| Size | 281 Kbytes |
| Pages | 11 pages |
| Description | LOW POWER 128K x 8 CMOS STATIC RAM |
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