# isc N-Channel MOSFET Transistor D84CK2

## Features
· Drain Current: I D = 8A @ T C =25℃
· Drain-Source Voltage: V DSS = 60V (Min)
· Static Drain-Source On-Resistance: R DS(on) = 0.3Ω (Max) @ VGS=10V
· 100% Avalanche Tested
· Minimum Lot-to-Lot Variations for Robust Device Performance

## Absolute Maximum Ratings

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	60	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	8	A
IDM	Drain Current-Single Pluse	32	A
PD	Total Dissipation @TC=25℃	40	W
TJ	Max. Operating Junction Temperature	-55~150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	3.12	℃/W

## Electrical Characteristics
TC=25℃ unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID= 0.25mA	60	-	V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 0.25mA	2	4	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 4A	-	0.3	Ω
IGSS	Gate-Body Leakage Current	VGS= ±20V;VDS= 0	-	±0.5	uA
IDSS	Zero Gate Voltage Drain Current	VDS= 60V; VGS= 0	-	250	uA
VSD	Forward On-Voltage	IS= 8A; VGS= 0	-	2.5	V

## Applications
· Motor Drive
· DC-DC Converter
· Power Switch
· Solenoid Drive

## Important Notices
· Intended for general electronic equipment.
· Not designed for specialized quality/reliability, hazardous environments, aerospace, or medical applications.
· Contact ISC for such applications.
· ISC disclaims all liability arising from application or use of its products.