# isc N-Channel MOSFET Transistor D84BN2

## FEATURES
· Drain Current: ID = 2.5A @ TC = 25℃
· Drain-Source Voltage: VDSS = 200V (Min)
· Static Drain-Source On-Resistance: RDS(on) = 1.5Ω (Max) @ VGS = 10V
· 100% avalanche tested
· Minimum lot-to-lot variations for robust device performance

## DESCRIPTION
· Suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.

## ABSOLUTE MAXIMUM RATINGS

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	200	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	2.5	A
IDM	Drain Current-Single Pluse	10	A
PD	Total Dissipation@TC=25℃	20	W
TJ	Max. Operating Junction Temperature	-55~150	℃
Tstg	Storage Temperature	-55~150	℃

## THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	6.25	℃/W

## ELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID= 0.25mA	200	-	V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 0.25mA	2	4	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 1.25A	-	1.5	Ω
IGSS	Gate-Body Leakage Current	VGS= ±20V;VDS= 0	-	±0.5	uA
IDSS	Zero Gate Voltage Drain Current	VDS= 200V; VGS= 0	-	250	uA
VSD	Forward On-Voltage	IS= 2.5A; VGS= 0	-	2	V

## NOTICE
· ISC products are intended for general electronic equipment.
· Not designed for use in specialized quality/reliability applications or hazardous environments.
· ISC makes no warranty regarding suitability for a particular purpose.
· ISC disclaims liability for application or use of products.

_isc website_ ： _[www.iscsemi.com](http://www.iscsemi.com)_