# isc N-Channel MOSFET Transistor D84BK2

## FEATURES
· Drain Current: I D = 4A @ T C = 25℃
· Drain-Source Voltage: V DSS = 60V (min)
· Static Drain-Source On-Resistance: R D S (on) = 0.6Ω (max) @ V G S = 10V
· 100% avalanche tested
· Minimum lot-to-lot variations for robust device performance

## DESCRIPTION
· Suitable for motor drive, DC-DC converter, power switch, and solenoid drive applications.

## ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
· Drain-Source Voltage (V DSS): 60 V
· Gate-Source Voltage (V G S): ±20 V
· Drain Current (I D): 4 A
· Drain Current (Single Pulse) (I D M): 16 A
· Total Dissipation (P D) @ T C =25℃: 20 W
· Max. Operating Junction Temperature (T J): -55~150 ℃
· Storage Temperature (T stg): -55~150 ℃

## THERMAL CHARACTERISTICS
· Thermal Resistance, Junction to Case (Rth j-c): 6.25 ℃/W

## ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID= 0.25mA	60	-	V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 0.25mA	2	4	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 2A	-	0.6	Ω
IGSS	Gate-Body Leakage Current	VGS= ±20V;VDS= 0	-	±0.5	uA
IDSS	Zero Gate Voltage Drain Current	VDS= 60V; VGS= 0	-	250	uA
VSD	Forward On-Voltage	IS= 4A; VGS= 0	-	2.5	V

## NOTICE
· ISC reserves the rights to make changes to the datasheet at any time.
· Products are intended for general electronic equipment.
· Not designed for specialized quality/reliability applications, hazardous environments, aerospace, or medical fields. Contact ISC for these applications.
· ISC makes no warranty regarding suitability for any purpose and disclaims all liability.