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Part No.	MS3383
Manufacturer	ADPOW
Size	96 Kbytes
Pages	3 pages
Description	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

Datasheet Summary with AI

# MS3383 Microwave Power Transistor Summary

## Description
· Hermetically sealed silicon NPN microwave power transistor.
· Designed for Class C applications in the 1-3 GHz frequency range.
· Features gold metallization and emitter ballasting for reliability and ruggedness.

## Features
· Gold Metallization
· Pout = 1.0 W Minimum
· 3.0 GHz Operating Frequency
· Gain (Gp) = 7.0 dB
· Infinite VSWR Capability at Rated Conditions
· Hermetic Package
· Common Base Configuration

## Absolute Maximum Ratings (Tcase = 25°C)
· Power Dissipation: 6.0 W
· Collector-Supply Voltage: 30 V
· Device Current: 200 mA
· Junction Temperature: 200 º C
· Storage Temperature: -65 to +200 º C
· Thermal Resistance Junction-case: 25 °°C/W

## Electrical Specifications (Tcase = 25°C)

Static
· BV CBO (IC=1mA, IE=0mA): 45 V
· BV CER (IC=5mA, RBE=10Ω): 45 V
· BV EBO (IE=1mA, IC=0mA): 3.5 V
· ICBO (VCE=28V): 0.5 mA
· H FE (VCE=5V, IC=100mA): 30-300
Dynamic
· P OUT (f=3.0 GHz, P IN = 0.20 W, Vcc = 28V): 1.0 W
· G P (f=3.0 GHz, P IN = 0.20 W, Vcc = 28V): 7.0 dB
· ηC (f=3.0 GHz, P IN = 0.20 W, Vcc = 28V): 30 %
· C OB (f=1 MHz, VCB=28V): 3.5 pF

Impedance Data (P IN = 0.20W, V CC = 28V)
· 1.0 GHz: Z IN = 9.0 + j9.0 Ω, Z CL = 21 + j48.0 Ω
· 2.0 GHz: Z IN = 18 + j34.5 Ω, Z CL = 7.5 + j22.0 Ω
· 3.0 GHz: Z IN = 65 + j22.0 Ω, Z CL = 3.8 + j3.0 Ω