# MS3024 Transistor Summary

## Product Description

· Type: Common base, hermetically sealed silicon NPN microwave transistor
· Applications: Class C amplifier applications in 1.0 – 2.0 GHz frequency range
· Features:
- Emitter ballasted geometry
- Refractory/gold metallization
- Infinite VSWR capability at rated conditions
- Hermetic Stripac package

## Absolute Maximum Ratings (Tcase = 25°C)

· Collector-Supply Voltage (Vcc): 35 V
· Device Current (IC): 1 A
· Power Dissipation (PDISS): 29 W
· Junction Temperature (TJ): 200 °C
· Storage Temperature (TSTG): –65 to +200 °C

## Thermal Data

· Junction-Case Thermal Resistance (R TH(j-c)): 6 °C/W

## Electrical Specifications

Static

· BVCBO (IC=1mA, IE=0mA): 45 V
· BVEBO (IE=1mA, IC=0mA): 3.5 V
· BVCER (IC=5mA, RBE=10Ω): 45 V
· ICBO (VCB=28V): 2.5 mA
· hFE (VCE=5V, IC=500mA): 15 - 120

Dynamic

· POUT (f=2GHz, PIN=1W, VCE=28V): 5 - 6 W
· ÇC* (f=2GHz, PIN=1W, VCE=28V): 35 - 40 %
· GP* (f=2GHz, PIN=1W, VCE=28V): 7 - 7.8 dB
· COB (f=1MHz, VCB=28V): 10 PF

Impedance Data

Frequency (GHz)	Zin (Ω)	Zcl (Ω)
1.0	3.0 + j 6.0	7.2 + j 6.0
1.5	3.5 + j 8.0	3.7 – j 0.2
1.7	4.0 + j 9.0	2.8 – j 2.3
2.0	4.8 + j 10.5	2.3 – j 4.5

## Contact Information

· Website: WWW.ADVANCEDPOWER.COM
· Phone: (215) 631-9840
· Fax: (215) 631-9855
· Address: 140 Commerce Drive, Montgomeryville, PA 18936-1013