# isc N-Channel MOSFET Transistor ISCNH393D

## Features

️· Drain Current (ID): 90A @ TC=25℃
️· Drain-Source Voltage (VDSS): 100V (Min)
️· Static Drain-Source On-Resistance (RDS(on)): 6mΩ (Max) @ VGS=10V
️· 100% avalanche tested
️· Minimum lot-to-lot variations for robust device performance

## Absolute Maximum Ratings (Ta=25℃)

️· VDSS (Drain-Source Voltage): 100 V
️· VGS (Gate-Source Voltage-Continuous): ±20 V
️· ID (Drain Current-Continuous): 90 A
️· PD (Total Dissipation @TC=25℃): 160 W
️· TJ (Max. Operating Junction Temperature): -55~150 ℃
️· Tstg (Storage Temperature): -55~150 ℃

## Thermal Characteristics

️· Rthj-c (Thermal Resistance, Junction to Case): 0.78 ℃/W

## Electrical Characteristics (TC=25℃)

️· V(BR)DSS (Drain-Source Breakdown Voltage): 100 V @ VGS=0; ID=0.25mA
️· VGS(th) (Gate Threshold Voltage): 2.0-4.0 V @ VDS=10V; ID=0.25mA
️· RDS(on) (Drain-Source On-Resistance): Up to 6.0 mΩ @ VGS=10V; ID=40A
️· IGSS (Gate-Body Leakage Current): Up to ±0.1 uA @ VGS= ±20V; VDS=0
️· IDSS (Zero Gate Voltage Drain Current): Up to 1.0 uA @ VDS=100V; VGS=0
️· VSD (Forward On-Voltage): Up to 1.5 V @ IS=40A; VGS=0

## Applications

️· Motor Drive
️· DC-DC Converter
️· Power Switch
️· Solenoid Drive

## Notice

️· Intended for general electronic equipment
️· Not for specialized quality/reliability or hazardous/aerospace/medical applications; contact ISC for such uses
️· ISC disclaims all liability regarding suitability for specific purposes