12P10G-S08-R / SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Part No.	12P10G-S08-R
Manufacturer	DOINGTER
Size	1Mb
Pages	4 pages
Description	P-Channel MOSFET uses advanced trench technology

Datasheet Summary with AI

# 12P10G-S08-R MOSFET

## Description
P-Channel MOSFET utilizing trench technology for low RDS(on) and low gate charge, suitable for various applications.

## Features
️· VDS = -100V, ID = -1.8A, RDS(ON) < 200mΩ @ VGS = -10V
️· Low gate charge
️· Green device available
️· Advanced trench technology for ultra-low RDS(ON)
️· Excellent package for heat dissipation

## Absolute Maximum Ratings

Parameter Rating Units

VDS (Drain-Source Voltage) -100 V

VGS (Gate-Source Voltage) ±20 V

ID (Continuous Drain Current @ 25°C) -1.8 A

ID (Continuous Drain Current @ 70°C) -1.4 A

ID (Pulsed Drain Current) -7.2 A

PD (Power Dissipation @ 25°C) 2 W

PD (Power Dissipation Derate) 0.016 (W/°C) W/°C

TJ, TSTG (Junction/Storage Temperature) -55 to +150 °C

## Thermal Characteristics

Parameter Max Units

RƟJA (Thermal Resistance) 62.5 °C/W

## Electrical Characteristics

Parameter Conditions Min Typ Max Units

BVDSS (Drain-Source Breakdown Voltage) VGS=0V, ID=250μA -100 --- --- V

IDSS (Zero Gate Voltage Drain Current) VGS=0V, VDS=-100V, TJ=25°C --- --- -1 μA

IGSS (Gate-Source Leakage) VGS=±20V, VDS=0A --- --- ±100 nA

VGS(th) (Threshold Voltage) VGS=VDS, ID=250μA -1.2 -1.6 -2.5 V

RDS(ON) (Drain-Source Resistance) VGS=-10V, ID=-1.8A --- 165 200 mΩ

td(on) (Turn-On Delay) VDD=-50V, VGS=-10V, RG=25Ω, ID=1.8A --- 18 36 ns

Qg (Total Gate Charge) VDS=-80V, VGS=-10V, ID=-1.8A --- 20 40 nC

## Drain-Source Diode Characteristics

Parameter Conditions Max Units

IS (Continuous Source Current) VG=VD=0V --- --- -1.8 A

trr (Reverse Recovery Time) VR=-100V, IS=-1A, di/dt=100A/μS --- 13 --- ns

## Notes
️· Repetitive ratings are limited by junction temperature.
️· Electrical data is based on pulsed testing.
️· Operating parameters are temperature-independent.

Parameter	Rating	Units
VDS (Drain-Source Voltage)	-100	V
VGS (Gate-Source Voltage)	±20	V
ID (Continuous Drain Current @ 25°C)	-1.8	A
ID (Continuous Drain Current @ 70°C)	-1.4	A
ID (Pulsed Drain Current)	-7.2	A
PD (Power Dissipation @ 25°C)	2	W
PD (Power Dissipation Derate)	0.016 (W/°C)	W/°C
TJ, TSTG (Junction/Storage Temperature)	-55 to +150	°C

Parameter	Conditions	Min	Typ	Max	Units
BVDSS (Drain-Source Breakdown Voltage)	VGS=0V, ID=250μA	-100	---	---	V
IDSS (Zero Gate Voltage Drain Current)	VGS=0V, VDS=-100V, TJ=25°C	---	---	-1	μA
IGSS (Gate-Source Leakage)	VGS=±20V, VDS=0A	---	---	±100	nA
VGS(th) (Threshold Voltage)	VGS=VDS, ID=250μA	-1.2	-1.6	-2.5	V
RDS(ON) (Drain-Source Resistance)	VGS=-10V, ID=-1.8A	---	165	200	mΩ
td(on) (Turn-On Delay)	VDD=-50V, VGS=-10V, RG=25Ω, ID=1.8A	---	18	36	ns
Qg (Total Gate Charge)	VDS=-80V, VGS=-10V, ID=-1.8A	---	20	40	nC

Parameter	Conditions	Max	Units
IS (Continuous Source Current)	VG=VD=0V	---	---	-1.8	A
trr (Reverse Recovery Time)	VR=-100V, IS=-1A, di/dt=100A/μS	---	13	---	ns