# FPD2250 1.5W Power PHEMT

## Features

· 32 dBm Linear Output Power at 12 GHz
· 7.5 dB Power Gain at 12 GHz
· 42 dBm Output IP3
· 45% Power-Added Efficiency

## Description & Applications

· AlGaAs/InGaAs pseudomorphic PHEMT with a 0.25 µm by 2250 µm Schottky barrier gate.
· Features Si3N4 passivation and is available in ceramic and plastic packages.
· Applications: SATCOM uplink transmitters, PCS/Cellular amplifiers, medium-haul digital radio transmitters.

## Electrical Specifications (at 22°C, 12 GHz)

· Power at 1 dB Compression: 31.0 - 32.0 dBm
· Maximum Stable Gain: 8.0 - 9.0 dB
· Power Gain at P1dB: 6.5 - 7.5 dB
· Power-Added Efficiency: 45%
· Output IP3: 40-42 dBm
· Saturated Drain-Source Current (IDSS): 560 - 825 mA
· Maximum Drain-Source Current: 1125 mA
· Gate-Source Leakage Current: 10 µA

## Absolute Maximum Ratings

· Drain-Source Voltage: 8 V
· Gate-Source Voltage: -3 V
· RF Input Power: 450 mW
· Total Power Dissipation: 5.0 W

## Handling & Assembly

· Requires ESD precautions (Class 1A).
· Recommended die attach: gold/tin eutectic solder (280-290°C).
· Recommended wire bonding: thermo-compression wedge bonding (250-260°C).

## Additional Information

· Complete design data (S-parameters, noise data, large-signal models) are available on the Filtronic website.
· Specifications subject to change without notice.