# 10N65L-TA3-T N-Channel Power MOSFET

## FEATURES
· Low figure-of-merit (FOM) Ron x Qg
· Low input capacitance (Ciss)
· Reduced switching and conduction losses
· Ultra low gate charge (Qg)
· Avalanche energy rated (UIS)

## APPLICATIONS
· Server and telecom power supplies
· Switch mode power supplies (SMPS)
· Power factor correction power supplies (PFC)
· Lighting (HID, Fluorescent)
· Industrial

## ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	VDS	650	V
Gate-Source Voltage	VGS	±30	V
Continuous Drain Current (Tc=25°C)	ID	10	A
Pulsed Drain Current	IDM	40	A
Maximum Power Dissipation	PD	34	W
Operating/Storage Temperature	TJ, Tstg	-55 to +150	°C

## SPECIFICATIONS (TJ = 25 °C)

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	VDS	650	-	-	V
Gate-Source Threshold Voltage	VGS(th)	2	-	4	V
Drain-Source On-State Resistance (VGS=10V, ID=8A)	RDS(on)	-	0.84	-	Ω
Total Gate Charge (VGS=10V, VDS=520V)	Qg	-	43	-	nC

## PACKAGE OPTIONS
· TO-220AB
· TO-220 FULLPAK
· TO-263AB (D2PAK)

## THERMAL RESISTANCE

Parameter	Symbol	Typ	Max	Unit
Junction-to-Ambient	RthJA	-	60	°C/W
Junction-to-Case (Drain)	RthJC	-	0.8	°C/W

## NOTES
· RoHS Compliant
· Halogen-Free