## Summary of the 2SC554 Datasheet

This document is a datasheet for the 2SC554 NPN bipolar junction transistor. Here's a breakdown of the key information:

1. General Characteristics:

️· Type: NPN Transistor
️· Voltage: Designed for applications up to 100V
️· Current: Capable of handling up to 2A continuous collector current.
️· Package: SOT-89
️· Applications: General purpose amplification and switching.

2. Absolute Maximum Ratings:

️· Collector-Base Voltage (VCBO): 100V
️· Collector-Emitter Voltage (VCEO): 100V
️· Emitter-Base Voltage (VEBO): 6V
️· Continuous Collector Current (IC): 2A
️· Collector Power Dissipation (PC): 500mW
️· Junction Temperature (TJ): 150°C
️· Storage Temperature Range (TSTG): -55 to +150°C

3. Electrical Characteristics (at Ta = 25°C): *(Unless otherwise specified)*

️· Collector-Base Breakdown Voltage (V(BR)CBO): 100V (IC = 0.1mA, IE = 0)
️· Collector-Emitter Breakdown Voltage (V(BR)CEO): 100V (IC = 1mA, IB = 0)
️· Emitter-Base Breakdown Voltage (V(BR)EBO): 6V (IE = 0.1mA, IC = 0)
️· Collector Cut-off Current (ICBO): ≤1µA (VCB = 100V, IE = 0)
️· Emitter Cut-off Current (IEBO): ≤1µA (VEB = 4V, IC = 0)
️· DC Current Gain (hFE): 82 to 270 (VCE = 3V, IC = 100mA)
️· Collector-Emitter Saturation Voltage (VCE(sat)): ≤0.2V (IC = 500mA, IB = 25mA), ≤0.3V (IC = 1A, IB = 50mA)
️· Transition Frequency (fT): ≥30 MHz (VCE = 5V, IC = 100mA)
️· Collector Output Capacitance (Cob): 16 pF (VCB = 10V, IE = 0, f = 1 MHz)

4. Other Information:

️· Date of Revision: 04-Oct-2018 (Rev. A)
️· Manufacturer/Supplier: The document is provided by "Elektronische Bauelemente" (Electronic Components) – likely a distributor.
️· Website: http://www.SeCoGmbH.com

In essence, the 2SC554 is a relatively common, low-to-medium power NPN transistor suitable for a variety of general-purpose applications where moderate gain, voltage, and current handling capabilities are required.