# MP4304 Power Transistor Module

## Overview
TOSHIBA Silicon NPN Epitaxial Type, high-gain power transistor (4 in 1) for high power switching applications like hammer drives, pulse motor drives, and inductive load switching. Small package, full molding (SIP 12 pin).

## Key Features
️· High collector power dissipation (PT = 4.4W @ Ta = 25°C)
️· High collector current (IC (DC) = 3A max)
️· High DC current gain (hFE = 600 min @ VCE = 2V, IC = 1A)

## Maximum Ratings (Ta = 25°C)
️· Collector-base voltage (VCBO): 80V
️· Collector-emitter voltage (VCEO): 80V
️· Emitter-base voltage (VEBO): 7V
️· DC Collector Current (IC): 3A
️· Pulse Collector Current (ICP): 5A
️· Continuous Base Current (IB): 0.5A
️· Collector Power Dissipation (PC): 2.2W (1 device), 4.4W (4 devices)
️· Junction Temperature (Tj): 150°C
️· Storage Temperature Range (Tstg): -55 to 150°C

## Electrical Characteristics (Ta = 25°C)
️· hFE (1) (VCE = 2V, IC = 1A): 600 (min)
️· hFE (2) (VCE = 2V, IC = 2A): 150 (min)
️· Collector-Emitter Saturation Voltage (VCE(sat) @ IC = 1.5A, IB = 15mA): 0.25-0.5V
️· Base-Emitter Saturation Voltage (VBE(sat) @ IC = 1.5A, IB = 15mA): 1.2V (max)
️· Transition Frequency (fT @ VCE = 2V, IC = 0.1A): 85 MHz (typ)

## Thermal Characteristics
️· Thermal Resistance (Junction-to-Ambient, 4 devices): 28.4°C/W (max)
️· Max Lead Temperature (Soldering, 3.2mm from case, 10s): 260°C

## Package & Weight
️· SIP 12 pin
️· Weight: 3.9g (typ)

## Important Notes
️· Designed for general electronics applications.
️· Not intended for use in critical applications where malfunction could cause life-threatening situations.
️· Refer to datasheet for complete specifications and application guidance.